2N3906
THERMAL DATA
R
thj-amb
•
R
thj-Case
•
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Case
Max
Max
200
83.3
o
o
C/W
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CEX
I
BEX
Parameter
Collector Cut-off
Current (V
BE
= 3 V)
Base Cut-off Current
(V
BE
= 3 V)
Test Conditions
V
CE
= -30 V
V
CE
= -30 V
I
C
= -1 mA
-40
Min.
Typ.
Max.
-50
-50
Unit
nA
nA
V
V
(BR)CEO
∗
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
V
(BR)CBO
Collector-Base
Breakdown Voltage
(I
E
= 0)
Emitter-Base
Breakdown Voltage
(I
C
= 0)
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
DC Current Gain
I
C
= -10
µA
-60
V
V
(BR)EBO
I
E
= -10
µA
-6
V
V
CE(sat)
∗
V
BE(sat)
∗
h
FE
∗
I
C
= -10 mA
I
C
= -50 mA
I
C
= -10 mA
I
C
= -50 mA
I
C
I
C
I
C
I
C
I
C
=
=
=
=
=
-0.1 mA
-1 mA
-10 mA
-50 mA
-100 mA
I
B
= -1 mA
I
B
= -5 mA
I
B
= -1 mA
I
B
= -5 mA
V
CE
=
V
CE
=
V
CE
=
V
CE
=
V
CE
=
-1
-1
-1
-1
-1
V
V
V
V
V
-0.65
60
80
100
60
30
250
4
6
25
-0.25
-0.4
-0.85
-0.95
V
V
V
V
300
f
T
NF
C
CBO
C
EBO
t
d
t
r
t
s
Transition Frequency
Noise Figure
Collector-Base
Capacitance
Emitter-Base
Capacitance
Delay Time
Rise Time
Storage Time
I
C
= -10mA V
CE
= -20 V f = 100 MHz
V
CE
= -5 V I
C
= -0.1 mA f = 10 Hz
to 15.7 KHz R
G
= 1 KΩ
I
E
= 0
I
C
= 0
V
CB
= -5 V
V
EB
= -0.5 V
f = 100 KHz
f = 100 KHz
MHz
dB
pF
pF
35
35
ns
ns
ns
ns
I
C
= -10 mA
V
CC
= -3V
I
C
= -10 mA
V
CC
= -3V
I
B
= -1 mA
I
B1
= -I
B2
= -1 mA
225
72
Fall Time
t
f
∗
Pulsed: Pulse duration = 300
µs,
duty cycle
≤
2 %
2/5
STMICROELECTRONICS [ STMICROELECTRONICS ]
