2N2905A/2N2907A
THERMAL DATA
T O-39
R
t hj-ca se
R
t hj- amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
58.3
292
TO -18
97.3
437.5
o
o
C/W
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symb ol
I
CBO
I
CEX
I
BEX
Parameter
Collector Cut-off
Current (I
E
= 0)
Collector Cut-off
Current (V
BE
= -0.5V)
Base Cut-off Current
(V
BE
= -0.5V)
Test Cond ition s
V
CB
= -50 V
V
CB
= -50 V
V
CE
= -30 V
V
CE
= -30 V
I
C
= -10
µA
-60
T
c ase
= 150 C
o
Min.
Typ .
Max.
-10
-10
-50
-50
Un it
nA
µA
nA
nA
V
V
( BR)CBO
∗
Collector-Base
Breakdown Voltage
(I
E
= 0)
V
( BR)CEO
∗
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
V
(BR)EBO
∗
Emitter-Base
Breakdown Voltage
(I
C
= 0)
V
CE(sat )
∗
V
BE(s at)
∗
h
FE
∗
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
DC Current G ain
I
C
= -10 mA
-60
V
I
E
= -10
µA
-5
V
I
C
= -150 mA
I
C
= -500 mA
I
C
= -150 mA
I
C
= -500 mA
I
C
I
C
I
C
I
C
I
C
=
=
=
=
=
-0.1 mA
-1 mA
-10 mA
-150 mA
-500 mA
I
B
= -15 mA
I
B
= -50 mA
I
B
= -15 mA
I
B
= -50 mA
V
CE
V
CE
V
CE
V
CE
V
CE
= -10 V
= -10 V
= -10 V
= -10 V
= -10 V
75
100
100
100
50
200
-0.4
-1.6
-1.3
-2.6
V
V
V
V
300
MHz
30
8
10
40
80
30
45
100
pF
pF
ns
ns
ns
ns
ns
ns
f
T
C
EBO
C
CBO
t
d
∗∗
t
r
∗∗
t
s
∗∗
t
f
∗∗
t
on
∗∗
t
off
∗∗
Transition F requency
Emitter Base
Capacitance
Collector Base
Capacitance
Delay Time
Rise Time
Storage Time
Fall T ime
Turn-on T ime
Turn-off T ime
V
CE
= -50 V
I
C
= -20 mA
I
C
= 0
I
E
= 0
f = 100 MHz
f = 1MHz
f = 1MHz
V
EB
= -2 V
V
CB
= -10 V
V
CC
= -30 V
I
B1
= -15 mA
V
CC
= -30 V
I
B1
= -15 mA
I
C
= -150 mA
I
C
= -150 mA
V
CC
= -6 V
I
C
= -150 mA
I
B1
= -I
B2
= -15 mA
V
CC
= -6 V
I
C
= -150 mA
I
B1
= -I
B2
= -15 mA
V
CC
= -30 V
I
B1
= -15 mA
I
C
= -150 mA
V
CC
= -6 V
I
C
= -150 mA
I
B1
= -I
B2
= -15 mA
∗
Pulsed: Pulse duration = 300
µs,
duty cycle
≤
1 %
∗∗
See test circuit
2/7
STMICROELECTRONICS [ STMICROELECTRONICS ]
