®
1N 6263
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
Metal to silicon junction diode featuring high break-
down, low turn-on voltage and ultrafast switching.
Primarly intended for high level UHF/VHF detection
and pulse application with broad dynamic range.
ABSOLUTE RATINGS (limiting values)
Symbol
V
RRM
I
F
I
FSM
T
stg
T
j
T
L
Parameter
Repetitive Peak Reverse Voltage
Forward Continuous Current*
Surge non Repetitive Forward Current*
Storage and Junction Temperature Range
Maximum Lead Temperature for Soldering during 10s at 4mm
from Case
T
a
= 25
°C
t
p
≤
1s
DO 35
(Glass)
Value
60
15
50
- 65 to 200
- 65 to 200
230
Unit
V
mA
mA
°C
°C
THERMAL RESISTANCE
Symbol
R
th(j-a)
Junction-ambient*
Test Conditions
Value
400
Unit
°C/W
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol
V
BR
V
F
* *
T
amb
= 25°C
T
amb
= 25°C
T
amb
= 25°C
I
R
* *
T
amb
= 25°C
Test Conditions
I
R
= 10µA
I
F
= 1mA
I
F
= 15mA
V
R
= 50V
Min.
60
0.41
1
0.2
µA
Typ.
Max.
Unit
V
V
DYNAMIC CHARACTERISTICS
Symbol
C
τ
T
amb
= 25°C
T
amb
= 25°C
Test Conditions
V
R
= 0V
I
F
= 5mA
f = 1MHz
Krakauer Method
Min.
Typ.
Max.
2.2
100
Unit
pF
ps
* On infinite heatsink with 4mm lead length
** Pulse test: t
p
≤
300µs
δ <
2%.
Matched batches available on request. Test conditions (forward voltage and/or capacitance) according to customer specification.
August 1999 Ed: 1A
1/3
STMICROELECTRONICS [ STMICROELECTRONICS ]
