1N581x
Fig. 3:
Normalized avalanche power derating
versus pulse duration.
P
ARM
(t
p
)
P
ARM
(1µs)
1
Fig. 4:
Normalized avalanche power derating
versus junction temperature.
P
ARM
(t
p
)
P
ARM
(25°C)
1.2
1
0.1
0.8
0.6
0.01
0.4
0.2
0.001
0.01
0.1
1
t
p
(µs)
0
10
100
1000
T
j
(°C)
0
25
50
75
100
125
150
Fig. 5-1:
Non repetitive surge peak forward
current versus overload duration
(maximum values) (1N5817/1N5818).
10
9
8
7
6
5
4
3
2
1
0
1E-3
I
M
t
Fig. 5-2:
Non repetitive surge peak forward
current versus overload duration
(maximum values) (1N5819).
8
7
6
IM(A)
IM(A)
Ta=25°C
Ta=75°C
5
4
3
Ta=25°C
Ta=75°C
Ta=100°C
2
I
M
Ta=100°C
δ
=0.5
t(s)
1E-2
1E-1
1E+0
1
0
1E-3
t
δ
=0.5
t(s)
1E-2
1E-1
1E+0
Fig. 6:
Relative variation of thermal impedance
junction to ambient versus pulse duration (epoxy
printed circuit board, e(Cu)=35mm, recommended
pad layout).
1.0
0.8
0.6
0.4
δ
= 0.2
Fig. 7:
Junction capacitance versus reverse
voltage applied (typical values).
Zth(j-a)/Rth(j-a)
C(pF)
500
F=1MHz
Tj=25°C
200
1N5817
δ
= 0.5
100
1N5818
50
T
δ
= 0.1
Single pulse
1N5819
0.2
20
tp(s)
1E+1
δ
=tp/T
tp
VR(V)
10
1
2
5
10
20
40
0.0
1E-1
1E+0
1E+2
1E+3
3/5
STMICROELECTRONICS [ STMICROELECTRONICS ]
