SD1891-03
RF & MICROWAVE TRANSISTORS
1.6 GHz SATCOM APPLICATIONS
.
.
.
.
.
.
.
1.65 GHz
28 VOLTS
GOLD METALLIZED SYSTEM
POLYSILICON SITE BALLASTING
OVERLAY DIE GEOMETRY
HIGH RELIABILITY AND RUGGEDNESS
P
OUT
=
5.0 W MIN. WITH 14.0 dB GAIN
.230 2LFL (M151)
hermetically sealed
ORDER CODE
SD1891-03
BRANDING
1891-03
PIN CONNECTION
DESCRIPTION
The SD1891-03 is a 28 V silicon NPN transistor
designed for INMARSAT and other 1.6 GHz SAT-
COM applications. This device utilizes polysilicon
site ballasting with a gold metallized die to achieve
high reliability and ruggedness.
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
°
C)
Symbol
Parameter
Value
Unit
1. Collector
2. Emitter
3. Base
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
45
15
3.5
1.1
8.8
+200
−
65 to +200
V
V
V
A
W
°
C
°
C
THERMAL DATA
R
TH(j-c)
March 1993
Junction-Case Thermal Resistance
20.0
°C/W
1/5
STMICROELECTRONICS [ STMICROELECTRONICS ]
