Electrical characteristics
STS17NH3LL
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 3.
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
On/off states
Parameter
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
GS
= 0)
Gate-body leakage
current (V
DS
= 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
I
D
= 250 µA, V
GS
= 0
V
DS
= Max rating
V
DS
= Max rating @125°C
V
GS
= ± 16V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 8.5A
V
GS
= 4.5V, I
D
= 8.5A
1
0.004
0.005
0.0057
0.0075
Min
30
1
10
±100
Typ.
Max
Unit
V
µA
µA
nA
V
Ω
Ω
Table 4.
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
G
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Test conditions
V
DS
=25V, f=1MHz, V
GS
=
0
V
DD
=15V, I
D
=17A
V
GS
=4.5V
f=1 MHz Gate DC Bias = 0
Test signal level = 20mV
open drain
Min
Typ.
1810
565
41
18
4.8
5.3
0.5
1.5
24
Max
Unit
pF
pF
pF
nC
nC
nC
Ω
Gate input resistance
3
4/12
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