SD1530-01
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
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DESIGNED FOR HIGH POWER PULSED
IFF, DME, TACAN APPLICATIONS
40 WATTS (typ.) IFF 1030 - 1090 MHz
35 WATTS (min.) DME 1025 - 1150 MHz
25 WATTS (typ.) TACAN 960 - 1215 MHz
9.0 dB MIN. GAIN
REFRACTORY GOLD METALLIZATION
EMITTER BALLASTING AND LOW
THERMAL RESISTANCE FOR
RELIABILITY AND RUGGEDNESS
INFINITE LOAD VSWR CAPABILITY AT
SPECIFIED OPERATING CONDITIONS
INPUT MATCHED, COMMON BASE
CONFIGURATION
.280 4LSL (M115)
epoxy sealed
ORDER CODE
SD1530-01
BRANDING
1530-1
PIN CONNECTION
DESCRIPTION
The SD1530-01 is a gold metallized silicon, NPN
power transistor designed for applications requiring
high peak power and low duty cycles such as
IFF, DME and TACAN. The SD1530-01 is pack-
aged in the .280” input matched stripline package
resulting in improved broadband performance and
a low thermal resistance.
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
°
C)
Symbol
Parameter
Value
Unit
1. Collector
2. Base
3. Emitter
4. Base
V
CBO
V
CES
V
EBO
I
C
P
DISS
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
65
65
3.5
2.6
87.5
+200
−
65 to +150
V
V
V
A
W
°
C
°
C
THERMAL DATA
R
TH(j-c)
Junction-Case Thermal Resistance
October 11, 1993
2.0
°C/W
rev. 1 1/3
STMICROELECTRONICS [ STMICROELECTRONICS ]
