SD1224-10
RF & MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
.
.
.
.
.
.
30 MHz
28 VOLTS
IMD
−28
dB
COMMON EMITTER
GOLD METALLIZATION
P
OUT
=
30 W MIN. WITH 18 dB GAIN
.380 4LFL (M113)
epoxy sealed
ORDER CODE
SD1224-10
BRANDING
1224-10
PIN CONNECTION
DESCRIPTION
The SD1224-10 is a 28 V epitaxial silicon NPN
planar transistor designed primarily for SSB com-
munications. This device utilizes emitter ballasting
for improved ruggedness and reliability.
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
°
C)
Symbol
Parameter
Value
Unit
1. Collector
2. Emitter
3. Base
4. Emitter
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
65
36
4.0
4.5
80
+200
−
65 to +150
V
V
V
A
W
°
C
°
C
THERMAL DATA
R
TH(j-c)
Junction-Case Thermal Resistance
October 1992
2.2
°C/W
1/3
STMICROELECTRONICS [ STMICROELECTRONICS ]
