Electrical characteristics
STB120NH03L - STI120NH03L - STP120NH03L
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 3.
Symbol
V
(BR)DSS
On/off states
Parameter
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
GS
= 0)
Test conditions
I
D
= 250µA, V
GS
= 0
V
DS
= Max rating,
V
DS
= Max rating,
T
C
=125°C
Min.
30
1
10
Typ.
Max.
Unit
V
µA
µA
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Gate body leakage current
V
GS
= ±20V
(V
DS
= 0)
Gate threshold voltage
Static drain-source on
resistance
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 30A
V
GS
= 5V, I
D
= 30A
1
1.8
0.005
0.006
±
100
µA
V
Ω
Ω
3
0.0055
0.0105
Table 4.
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Rg
Q
g
Q
gs
Q
gd
Q
oss (1)
Q
gls (2)
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Off voltage rise time
Fall time
Gate input resistance
Test conditions
V
DS
= 25V, f = 1MHz,
V
GS
= 0
Min.
Typ.
4100
680
70
16
95
48
23
1.3
Max.
Unit
pF
pF
pF
ns
ns
ns
ns
Ω
V
DD
= 15V, I
D
= 30A,
R
G
= 4.7Ω, V
GS
= 10V
(see
f = 1MHz gate DC bias=0
test signal level=20mV
open drain
V
DD
=15V, I
D
= 60A
V
GS
=10V
(see
V
DS
= 24V, V
GS
= 0
V
DS
< 0, V
GS
= 0V
Total gate charge
Gate-source charge
Gate-drain charge
Output charge
Third-quadrant gate
charge
57
12
7
27
55
77
nC
nC
nC
ns
ns
1. Qoss = Coss*
∆
V
IN
, Coss = Cgd + Cds. See power losses calculation
2. Gate charge for synchronous operation.
4/17
STMICROELECTRONICS [ STMICROELECTRONICS ]
