STB120NH03L - STI120NH03L - STP120NH03L
Appendix A
Table 6.
Power losses calculation
High side switching (SW1)
Low side switch (SW2)
Pconduction
RDS(on)SW2 *I2L *(1−δ )
RDS(on)SW1 *I2L *δ
IL
Ig
Pswitching
Zero Voltage Switching
V *(Qgsth(SW1) + Qgd(SW1) )*f *
in
Recovery(1)
Not applicable
Not applicable
V *Qrr(SW2) *f
in
Pdiode
Conduction
V
f(SW2) *IL *tdeadtime *f
Pgate(QG)
Qg(SW1) *Vgg *f
Qgls(SW2) *Vgg *f
V *Qoss(SW1) *f
V *Qoss(SW2) *f
PQoss
in
in
2
2
1. Dissipated by SW1 during turn-on
Table 7.
Parameters meaning
Parameter
Meaning
d
Duty-cycle
Qgsth
Qgls
Post threshold gate charge
Third quadrant gate charge
On state losses
Pconduction
Pswitching
Pdiode
On-off transition losses
Conduction and reverse recovery diode losses
Gate drive losses
Pgate
PQoss
Output capacitance losses
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