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100HS3L- 参数 Datasheet PDF下载

100HS3L-图片预览
型号: 100HS3L-
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道30V - 0.0032ohm - 20A - PowerSO - 8的STripFET III功率MOSFET加上单片肖特基 [N-channel 30V - 0.0032ohm - 20A - PowerSO-8 STripFET III Power MOSFET plus monolithic schottky]
分类和应用:
文件页数/大小: 12 页 / 294 K
品牌: STMICROELECTRONICS [ STMICROELECTRONICS ]
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STSJ100NHS3LL
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
V
DS
V
GS
I
D(1)
I
D (2)
I
D
I
DM(3)
P
TOT
T
J
T
stg
Absolute maximum ratings
Parameter
Drain-source voltage (V
GS
= 0)
Gate-source voltage
Drain current (continuous) at T
C
= 25°C
Drain current (continuous) at T
C
=25°C
Drain current (continuous) at T
C
=100°C
Drain current (pulsed)
Total dissipation at T
C
= 25°C
(2)
Total dissipation at T
C
= 25°C
(1)
Operating junction temperature
Storage temperature
Value
30
±16
20
100
12.6
80
70
3
-55 to 150
Unit
V
V
A
A
A
A
W
W
°C
1. This value is rated accordingly to Rthj-pcb
2. This value is rated according to Rthj-c
3. Pulse width limited by safe operating area
Table 2.
Symbol
R
thj-c
R
thj-pcb(1)
Thermal data
Parameter
Thermal resistance junction-case max
Thermal resistance junction-pcb max
Value
1.8
42
Unit
°C/W
°C/W
1. When mounted on 1 inch² FR-4 board, 2oz Cu (t<10sec.)
Table 3.
Symbol
I
AV
E
AS
Avalanche data
Parameter
Avalanche current, not repetitive (pulse
width limited by Tjmax)
Single pulse avalanche energy (starting
Tj=25°C, I
D
=I
AV
, V
DD
=24V)
Value
10
1.8
Unit
A
J
3/12