ST2300SRG
N Channel Enhancement Mode MOSFET
6.0A
℃
ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
DrainꢀSource Breakdown
Voltage
V(BR)DSS
VGS(th)
IGSS
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
20
V
V
Gate Threshold Voltage
0.4
1.2
±
±
100
VDS=0V,VGS= 20V
Gate Leakage Current
nA
VDS=20V,VGS=0V
VDS=20V,VGS=0V
1
Zero Gate Voltage Drain
Current
IDSS
uA
10
℃
TJ=85
=
VGS 10V,ID=6.0A
0.035
0.048
0.090
Ω
Drainꢀsource OnꢀResistance
RDS(on)
=
VGS 4.5V,ID=5.0A
VGS=2.5V,ID=4.5A
Forward Tranconductance
Diode Forward Voltage
Dynamic
gfs
VDS=15V,ID=5.0A
30
S
V
VSD
IS=1.7A,VGS=0V
0.9 1.2
Total Gate Charge
GateꢀSource Charge
GateꢀDrain Charge
Qg
Qgs
Qgd
10
1.4
2.1
13
VDS=10V
VGS=4.5V
ID 5A
nC
pF
≡
Input Capacitance
Output Capacitance
Ciss
Coss
Crss
600
120
100
VDS=10V
VGS=0V
F=1MHz
Reverse Transfer Capacitance
15
25
VDD=10V
Ω
RL=10
ID=1A
td(on)
TurnꢀOn Time
TurnꢀOff Time
tr
40
45
30
60
65
40
nS
VGEN=4.5V
td(off)
tf
Ω
RG=6
3
ST2300SRG 2005. V1
86-755-83468588 86-755-83755599
STANSON [ STANSON TECHNOLOGY ]
