PNP TRANSISTOR
-100mA
A733
ꢀ AF OUTPUT AMPLIFIER
(
℃)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ta=25
PARAMETERS
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Leakage
Emitter-Base Leakage
SYMBOL MIN TYP MAX UNIT
CONDITION
Ic=1mA
BVceo
BVcbo
BVebo
Icbo
-50
-60
-5
V
V
V
u
Ic=5 A
μ
Ie=50 A
-0.1
-0.1
uA
uA
V
Vcb=-60V
Iebo
Veb=-5V
Collector-Emitter Saturation Voltage
DC Current Gain
Collector Current
( )
Vce sat
-0.18 -0.3
200 600
-100
Ic=-100mA, Ib=-10mA
Vce=-6.0V,Ic=-1.0mA
Hfe
Ic
90
mA
MHz
pF
Current Gain Bandwidth
Output Capacitance
fT
Cob
Pc
100 180
4.5
Vce=-6V, Ie=10mA
Vcb=-10V,Ie=0,f=1MHz
6.0
Power Dissipation
0.25
W
Junction Temperature
Tj
125 ℃
125 ℃
Storage Temperature
Tstg
-55
Classification of Hfe
Rank
R
Q
P
K
Range
90-180
135-270
200-400
300-600
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295