Preliminary
Preliminary
Product Description
Stanford Microdevices’ SPF-3043 is a high performance
0.25µm pHEMT Gallium Arsenide FET. This 300µm device is
ideally biased at 3V,20mA for lowest noise performance and
battery powered requirements. At 5V,40mA the device
delivers excellent OIP3 of 32dBm. It provides ideal
performance as a driver stage in many commercial and
industrial LNA applications.
SPF-3043
Low Noise pHEMT GaAs FET
Qualification Pending April 2001
Product Features
35
Gain, Gmax (dB)
Typical Gain Performance
3V,20mA
5V,40mA
30
25
20
15
10
5
0
2
Gmax
Gain
• DC-10 GHz Operation
• Ultra Low NF:
0.25 dB @ 1 GHz
0.50 dB @ 2 GHz
• High Assoc. Gain:
25 dB @ 1 GHz
22 dB @ 2 GHz
• Low Current Draw for NFopt (3V,20mA)
• +32 dBm OIP3, +20 dBm P1dB (5V,40mA)
• Low Cost High Performance pHEMT
Applications
• LNA for Wireless Infrastructure
8
10
4
6
Frequency (GHz)
• Fixed Wireless Infrastructure
• Wireless Data
• Driver Stage for Low Power Applications
Symbol
G
MAX
S
21
NF
min
P 1dB
OIP
3
V
P
I
DSS
g
mp
BV
GSO
BV
GDO
Rth
Device Characteristics, T = 25ºC
V
DS
=3V, I
DS
=20mA (unless otherw ise noted)
Maximum Available Gain
Z
S
=Z
S
*, Z
L
=Z
L
*
Insertion Gain
Z
S
=Z
L
=50
Ω
Minimum Noise Figure
Z
S
=Γ
OPT
, Z
L
=Z
L
*
Output 1 dB compression point
Z
S
=Z
SOPT
, Z
L
=Z
LOPT
Output Third Order Intercept Point
Z
S
=Z
SOPT
, Z
L
=Z
LOPT
Pinchoff Voltage
Saturated Drain Current
Peak Transconductance
Gate-to-Source Breakdown Voltage
Gate-to-Drain Breakdown Voltage
Thermal Resistance (junction to lead)
f = 0.9 GHz
f = 1.9 GHz
f = 0.9 GHz
f = 1.9 GHz
f = 0.9 GHz
f = 1.9 GHz
V
DS
=3V, I
DS
=20 mA
V
DS
=5V, I
DS
=40 mA
V
DS
=3V, I
DS
=20 mA
V
DS
=5V, I
DS
=40 mA
V
DS
= 2V, I
DS
= 0.1 mA
V
DS
= 2V, V
GS
= 0V
V
DS
= 2V, V
GS
@ g
mp
I
G
= 0.03 mA
Drain Open, Source Grounded
I
G
= 0.03 mA
Source Open, Drain Grounded
Units
dB
dB
dB
dB m
dB m
V
mA
mS
V
V
ºC/W
Min.
Typ.
25.5
22.4
18.5
18.0
0.25
0.50
15.5
20
29
32
Max.
-1.1
45
100
-0.8
67.5
150
-10
-10
150
-0.5
100
-8
-8
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2001 Stanford Microdevices, Inc. All worldwide rights reserved.
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-101772 Rev. A
1
STANFORD [ STANFORD MICRODEVICES ]
