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SNA-676-TR2 参数 Datasheet PDF下载

SNA-676-TR2图片预览
型号: SNA-676-TR2
PDF下载: 下载PDF文件 查看货源
内容描述: DC - 6.5 GHZ ,可级联的砷化镓MMIC放大器 [DC-6.5 GHZ , CASCADABLE GAAS MMIC AMPLIFIER]
分类和应用: 放大器
文件页数/大小: 3 页 / 92 K
品牌: STANFORD [ STANFORD MICRODEVICES ]
 浏览型号SNA-676-TR2的Datasheet PDF文件第1页浏览型号SNA-676-TR2的Datasheet PDF文件第2页  
SNA-676 DC-6.5 GHz Cascadable MMIC Amplifier
Absolute Maximum Ratings
P a r am e te r
A b s o lu te
M a xim u m
Part Number Ordering Information
Part Number
Devices Per Reel
Reel Size
SNA-676-TR1
D e vic e Cu rren t
Po w e r D is sip a tio n
R F In pu t P ow e r
Ju n ctio n Tem p era tu re
O p e ratin g Te m p e ra tu re
Sto ra g e Te m p e ra ture
11 0m A
7 00 m W
2 00 m W
+2 0 0 C
-4 5 C to +8 5C
-6 5 C to +1 50 C
SNA-676-TR2
SNA-676-TR3
1000
3000
5000
7"
13"
13"
R e c o m m e n d e d B ia s R e s is to r Va lu e s
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
Supply
Voltage(Vs)
R bias (O hm s)
5V
*
7.5V
24
9V
46
12V
89
15V
131
20V
203
** Not Recommended
MTTF vs. Temperature @ Id = 70mA
Lead Temperature
Junction
Temperature
+155C
MTTF (hrs)
+55C
1000000
+90C
+190C
100000
+120C
+220C
10000
50 Ohm Gain Blocks
Thermal Resistance (Lead-Junction): 250° C/W
Typical Biasing Configuration
Pin Designation
1
2
3
4
RF in
GND
RF out
and Bias
GND
Typical Performance at 25
°
C
Power Gain vs. Device Current
20mA Steps
12.0
11.5
11.0
10.5
10.0
9.5
9.0
8.5
8.0
0.1
1.0
2.0
3.0
4.0
5.0
6.0
5.5
5
50
55
60
65
70
75
80
80mA
Device Voltage vs. Id
7
6.5
dB
40mA
Vdc
6
GHz
mA
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
5-91