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SNA-500 参数 Datasheet PDF下载

SNA-500图片预览
型号: SNA-500
PDF下载: 下载PDF文件 查看货源
内容描述: DC - 3 GHz的,可级联的GaAs MMIC放大器 [DC-3 GHz, Cascadable GaAs MMIC Amplifier]
分类和应用: 放大器
文件页数/大小: 3 页 / 58 K
品牌: STANFORD [ STANFORD MICRODEVICES ]
 浏览型号SNA-500的Datasheet PDF文件第2页浏览型号SNA-500的Datasheet PDF文件第3页  
Product Description
Stanford Microdevices’ SNA-500 is a GaAs monolithic
broadband amplifier in die form. This amplifier provides
19dB of gain when biased at 70mA and 5.0V. P1dB and
TOIP may be improved by 2dB by baising @ 100mA.
External DC decoupling capacitors determine low fre-
quency response. The use of an external resistor allows
for bias flexibility and stability.
These unconditionally stable amplifiers are designed for
use as general purpose 50 ohm gain blocks. Also
available in packaged form (SNA-576, -586 & -587), its
small size (0.4mm x 0.4mm) and gold metallization make it an
ideal choice for use in hybrid circuits.
The SNA-500 is available in gel paks at 100 devices per
container.
SNA-500
DC-3 GHz, Cascadable
GaAs MMIC Amplifier
Output Power vs. Frequency
22
20
18
dB
16
14
12
0.1
1
2
3
4
5
Product Features
Cascadable 50 Ohm Gain Block
19dB Gain, +18dBm P1dB
1.5:1 Input and Output VSWR
Operates From Single Supply
Chip Back Is Ground
Applications
Narrow and Broadband Linear Amplifiers
Commercial and Industrial Applications
50 Ohm Gain Blocks
GHz
Electrical Specifications at Ta = 25C
Sym bol
P a r a m e t e r s : T e s t C o n d itio n s :
Id = 7 0 m A , Z
0
= 5 0 O h m s
S m a ll S ig n a l P o w e r G a in
f = 0 .1 -1 .0 G H z
f = 1 .0 -2 .0 G H z
f = 2 .0 -3 .0 G H z
f = 0 .1 -2 .0 G H z
U n its
dB
dB
dB
dB
G H z
f = 2 .0 G H z
f = 2 .0 G H z
f = 0 .1 -8 .0 G H z
f = 2 .0 G H z
f = 2 .0 G H z
f = 0 .1 -8 .0 G H z
dBm
psec
dB
V
d B /d e g C
m V /d e g C
4 .3
dBm
dB
M in .
1 8 .0
1 6 .0
1 5 .0
Ty p .
2 0 .0
1 8 .0
1 7 .0
+ /- 1 .0
3 .0
1 8 .0
4 .2
1 .5 :1
3 4 .0
120
2 2 .0
5 .0
-0 .0 0 2 7
-5 .0
5 .7
5 .0
M ax.
G
P
G
F
G a in F la tn e s s
3 d B B a n d w id th
O u tp u t P o w e r a t 1 d B C o m p r e s s io n
N o is e F ig u r e
In p u t / O u tp u t
T h ir d O r d e r In te r c e p t P o in t
G r o u p D e la y
R e v e r s e Is o la tio n
D e v ic e V o lta g e
D e v ic e G
a i n
T e m p e ra t u r e C o e ff ic ie n t
D e v ic e V o lt a g e T e m p e r a t u re C o e ff ic ie n t
BW 3dB
P
1dB
N F
VSW R
IP
T
3
D
IS O L
VD
d G /d T
d V /d T
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
5-69