Preliminary
Preliminary
SGA-5263 DC-4.5 GHz 3.4V SiGe Amplifier
Pin #
1
Function
Description
GND
Connection to ground. For best
performance use via holes (as close to
ground leads as possible) to reduce lead
inductance.
GND
Same as Pin 1
RF IN
RF input pin. This pin requires the use of an
external DC blocking capacitor chosen for
the frequency of operation.
Same as Pin 1
Same as Pin 1
RF output and bias pin. Bias should be
supplied to this pin through an external
series resistor and RF choke inductor.
Because DC biasing is present on this pin, a
DC blocking capacitor should be used in
most applications (see application
schematic). The supply side of this bias
netw ork should be w ell bypassed.
Device Schematic
2
3
4
5
6
GND
GND
RF OUT
Application Schematic
R ecommended B ias R esistor Values
Supply
Voltage(Vs)
Rbi as (Ohms)
5V
27
7.5V
68
9V
91
12V
140
Cd1
Cd2
R bias
V
s
Note: A bias resistor is needed for stability
over temperature.
50 ohm
microstrip
Lchoke
1,2
3
Cb1
6
4,5
Cb2
50 ohm
microstrip
R eference
D esignator
C b1
C b2
C d1
C d2
Lchoke
Function
D C Blocki ng
D C Blocki ng
D ecoupli ng
D ecoupli ng
AC Blocki ng
500 MH z
220 pF
220 pF
1 uF
100 pF
68 nH
850 MH z
100 pF
100 pF
1 uF
68 pF
33 nH
1950 MH z
68 pF
68 pF
1 uF
22 pF
22 nH
2400 MH z
56 pF
56 pF
1 uF
22 pF
18 nH
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
3
http://www.stanfordmicro.com
EDS-101540 Rev A
STANFORD [ STANFORD MICRODEVICES ]
