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SGA-2386 参数 Datasheet PDF下载

SGA-2386图片预览
型号: SGA-2386
PDF下载: 下载PDF文件 查看货源
内容描述: DC -2800 MHz的硅锗HBT可级联增益模块 [DC-2800 MHz Silicon Germanium HBT Cascadeable Gain Block]
分类和应用: 射频微波
文件页数/大小: 7 页 / 232 K
品牌: STANFORD [ STANFORD MICRODEVICES ]
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Preliminary
Preliminary
SGA-2386 DC-2800 MHz 2.7V SiGe Amplifier
Absolute Maximum Ratings
Parameter
Supply C urrent
Operati ng Temperature
Maxi mum Input Power
Storage Temperature Range
Operati ng Juncti on Temperature
Value
40
-40 to +85
+7
-40 to +85
+150
U nit
mA
C
dB m
C
C
Part Number Ordering Information
Part Number
SGA-2386-TR1
SGA-2386-TR2
Reel Siz e
7"
13"
Devices/Reel
1000
3000
Caution:
Operation of this device above any one of these
parameters may cause permanent damage. Appropriate
precautions in handling, packaging and testing devices
must be observed.
Recommended Bias Resistor Values
Supply
Voltage(Vs)
Rbias
(Ohms)
3V
15
5V
115
7.5V
240
9V
315
12V
465
Thermal Resistance (Lead-Junction):
97° C/W
Package Dimensions
Pin Designation
1
2
3
4
RF in
GND
RF out and Bias
GND
PCB Pad Layout
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
Doc # EDS-100627 Rev. A