欢迎访问ic37.com |
会员登录 免费注册
发布采购

SST39VF1601-90-4I-B3KE 参数 Datasheet PDF下载

SST39VF1601-90-4I-B3KE图片预览
型号: SST39VF1601-90-4I-B3KE
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位/ 32兆位/ 64兆位( X16 )多用途闪存+ [16 Mbit / 32 Mbit / 64 Mbit (x16) Multi-Purpose Flash Plus]
分类和应用: 闪存内存集成电路
文件页数/大小: 32 页 / 498 K
品牌: SST [ SILICON STORAGE TECHNOLOGY, INC ]
 浏览型号SST39VF1601-90-4I-B3KE的Datasheet PDF文件第6页浏览型号SST39VF1601-90-4I-B3KE的Datasheet PDF文件第7页浏览型号SST39VF1601-90-4I-B3KE的Datasheet PDF文件第8页浏览型号SST39VF1601-90-4I-B3KE的Datasheet PDF文件第9页浏览型号SST39VF1601-90-4I-B3KE的Datasheet PDF文件第11页浏览型号SST39VF1601-90-4I-B3KE的Datasheet PDF文件第12页浏览型号SST39VF1601-90-4I-B3KE的Datasheet PDF文件第13页浏览型号SST39VF1601-90-4I-B3KE的Datasheet PDF文件第14页  
16 Mbit / 32 Mbit / 64 Mbit Multi-Purpose Flash Plus  
SST39VF1601 / SST39VF3201 / SST39VF6401  
SST39VF1602 / SST39VF3202 / SST39VF6402  
Preliminary Specifications  
1
TABLE 7: CFI QUERY IDENTIFICATION STRING FOR SST39VF160X/320X/640X  
Address  
10H  
11H  
12H  
13H  
14H  
15H  
16H  
17H  
Data  
Data  
0051H  
0052H  
0059H  
0001H  
0007H  
0000H  
0000H  
0000H  
0000H  
0000H  
0000H  
Query Unique ASCII string “QRY”  
Primary OEM command set  
Address for Primary Extended Table  
Alternate OEM command set (00H = none exists)  
Address for Alternate OEM extended Table (00H = none exits)  
18H  
19H  
1AH  
T7.1 1223  
1. Refer to CFI publication 100 for more details.  
TABLE 8: SYSTEM INTERFACE INFORMATION FOR SST39VF160X/320X/640X  
Address  
Data  
Data  
1BH  
0027H  
VDD Min (Program/Erase)  
DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts  
1CH  
0036H  
VDD Max (Program/Erase)  
DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts  
1DH  
1EH  
1FH  
20H  
21H  
22H  
23H  
24H  
25H  
26H  
0000H  
0000H  
0003H  
0000H  
0004H  
0005H  
0001H  
0000H  
0001H  
0001H  
VPP min. (00H = no VPP pin)  
VPP max. (00H = no VPP pin)  
Typical time out for Word-Program 2N µs (23 = 8 µs)  
Typical time out for min. size buffer program 2N µs (00H = not supported)  
Typical time out for individual Sector/Block-Erase 2N ms (24 = 16 ms)  
Typical time out for Chip-Erase 2N ms (25 = 32 ms)  
Maximum time out for Word-Program 2N times typical (21 x 23 = 16 µs)  
Maximum time out for buffer program 2N times typical  
Maximum time out for individual Sector/Block-Erase 2N times typical (21 x 24 = 32 ms)  
Maximum time out for Chip-Erase 2N times typical (21 x 25 = 64 ms)  
T8.3 1223  
TABLE 9: DEVICE GEOMETRY INFORMATION FOR SST39VF1601/1602  
Address  
27H  
28H  
Data  
Data  
0015H  
0001H  
0000H  
0000H  
0000H  
0002H  
00FFH  
0001H  
0010H  
0000H  
001FH  
0000H  
0000H  
0001H  
Device size = 2N Bytes (15H = 21; 221 = 2 MByte)  
Flash Device Interface description; 0001H = x16-only asynchronous interface  
29H  
2AH  
2BH  
2CH  
2DH  
2EH  
2FH  
30H  
31H  
32H  
33H  
34H  
Maximum number of byte in multi-byte write = 2N (00H = not supported)  
Number of Erase Sector/Block sizes supported by device  
Sector Information (y + 1 = Number of sectors; z x 256B = sector size)  
y = 511 + 1 = 512 sectors (01FF = 511  
z = 16 x 256 Bytes = 4 KByte/sector (0010H = 16)  
Block Information (y + 1 = Number of blocks; z x 256B = block size)  
y = 31 + 1 = 32 blocks (001F = 31)  
z = 256 x 256 Bytes = 64 KByte/block (0100H = 256)  
T9.0 1223  
S71223-03-000 11/03  
©2003 Silicon Storage Technology, Inc.  
10