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SST34HF1682S-70-4E-B1SE 参数 Datasheet PDF下载

SST34HF1682S-70-4E-B1SE图片预览
型号: SST34HF1682S-70-4E-B1SE
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位并行的SuperFlash + 2/4/8兆位的SRAM ComboMemory [16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory]
分类和应用: 静态存储器
文件页数/大小: 38 页 / 482 K
品牌: SST [ SILICON STORAGE TECHNOLOGY, INC ]
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16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory  
SST34HF1602C / SST34HF1622C / SST34HF1642C  
SST34HF1642D / SST34HF1682D / SST34HF1622S / SST34HF1642S  
Advance Information  
TABLE 3: PIN DESCRIPTION  
Symbol  
Pin Name  
Functions  
AMS1 to A0 Address Inputs  
To provide flash address, A19-A0.  
To provide (P)SRAM address, AMS-A0  
SA  
SRAM x8 Address  
To provide additional address for x8 SRAM  
DQ14-DQ0 Data Inputs/Outputs  
To output data during Read cycles and receive input data during Write cycles.  
Data is internally latched during a flash Erase/Program cycle. The outputs are in  
tri-state when OE# is high or BES1# is high or BES2 is low and BEF# is high.  
DQ15/A-1  
Data Input/Output  
and LBS Address  
DQ15 is used as data I/O pin when in x16 mode (CIOF = “1”)  
A-1 is used as the LBS address pin when in x8 mode (CIOF = “0”)  
BEF#  
BES1#  
BES2  
OEF#2  
OES#2  
WEF#2  
WES#2  
OE#  
Flash Memory Bank Enable  
To activate the Flash memory bank when BEF# is low  
(P)SRAM Memory Bank Enable To activate the (P)SRAM memory bank when BES1# is low  
(P)SRAM Memory Bank Enable To activate the (P)SRAM memory bank when BES2 is high  
Output Enable  
Output Enable  
Write Enable  
To gate the data output buffers for Flash2 only  
To gate the data output buffers for SRAM2 only  
To control the Write operations for Flash2 only  
To control the Write operations for SRAM2 only  
To gate the data output buffers  
Write Enable  
Output Enable  
Write Enable  
WE#  
To control the Write operations  
CIOF  
Byte Selection for Flash  
When low, select Byte mode. When high, select Word mode.  
UBS#  
LBS#  
WP#  
Upper Byte Control ((P)SRAM) To enable DQ15-DQ8  
Lower Byte Control ((P)SRAM) To enable DQ7-DQ0  
Write Protect  
To protect and unprotect the top 8 KWord (4 sectors) from Erase or Program  
operation  
RST#  
Reset  
To Reset and return the device to Read mode  
RY/BY#  
Ready/Busy#  
To output the status of a Program or Erase Operation  
RY/BY# is a open drain output, so a 10K- 100Kpull-up resistor is required to  
allow RY/BY# to transition high indicating the device is ready to read.  
2
VSSF  
Ground  
Flash2 only  
SRAM2 only  
2
VSSS  
Ground  
VSS  
Ground  
VDDF  
VDDS  
NC  
Power Supply (Flash)  
Power Supply ((P)SRAM)  
No Connection  
2.7-3.3V Power Supply to Flash only  
2.7-3.3V Power Supply to (P)SRAM only  
Unconnected pins  
T3.0 1256  
1. AMS = Most Significant Address  
MS = A16 for SST34HF1622C/S, A17 for SST34HF1642C/D/S, and A18 for SST34HF1682D  
A
2. LS package only  
©2004 Silicon Storage Technology, Inc.  
S71256-00-000  
3/04  
11  
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