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SST27SF256 参数 Datasheet PDF下载

SST27SF256图片预览
型号: SST27SF256
PDF下载: 下载PDF文件 查看货源
内容描述: 256千比特/ 512千位/ 1兆位/ 2兆位( X8 )许多时间内可编程Flash [256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash]
分类和应用:
文件页数/大小: 26 页 / 268 K
品牌: SST [ SILICON STORAGE TECHNOLOGY, INC ]
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256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit Multi-Purpose Flash
SST27SF256 / SST27SF512 / SST27SF010 / SST27SF020
Data Sheet
TABLE 7: P
ROGRAM
/E
RASE
DC O
PERATING
C
HARACTERISTICS FOR
SST27SF256
V
DD
=5.0V±10%, V
PP
=V
PPH
(Ta=25°C±5°C)
Limits
Symbol Parameter
I
DD
I
PP
I
LI
I
LO
V
H
I
H
V
PPH
V
DD
Erase or Program Current
V
PP
Erase or Program Current
Input Leakage Current
Output Leakage Current
Supervoltage for A
9
Supervoltage Current for A
9
High Voltage for V
PP
Pin
Min
Max Units Test Conditions
30
1
1
1
11.4 12.6
100
11.4 12.6
mA
mA
µA
µA
V
µA
V
T7.1 502
CE#=V
IL,
OE#=V
IH
, V
PP
=12V±5%, V
DD
=V
DD
Max
CE#=V
IL,
OE#=V
IH
, V
PP
=12V±5%, V
DD
=V
DD
Max
V
IN
=GND to V
DD
, V
DD
=V
DD
Max
V
OUT
=GND to V
DD
, V
DD
=V
DD
Max
CE#=OE#=V
IL,
CE#=OE#=V
IL,
A
9
=V
H
Max
TABLE 8: P
ROGRAM
/E
RASE
DC O
PERATING
C
HARACTERISTICS FOR
SST27SF512
V
DD
=5.0V±10%, V
PP
=V
PPH
(Ta=25°C±5°C)
Limits
Symbol Parameter
I
DD
I
PP
I
LI
I
LO
V
H
I
H
V
PPH
V
DD
Erase or Program Current
V
PP
Erase or Program Current
Input Leakage Current
Output Leakage Current
Supervoltage for A
9
Supervoltage Current for A
9
High Voltage for OE#/V
PP
Pin
Min
Max Units Test Conditions
30
1
1
1
11.4 12.6
100
11.4 12.6
mA
mA
µA
µA
V
µA
V
T8.1 502
CE#=V
IL,
OE#/V
PP
=12V±5%, V
DD
=V
DD
Max
CE#=V
IL,
OE#/V
PP
=12V±5%, V
DD
=V
DD
Max
V
IN
=GND to V
DD
, V
DD
=V
DD
Max
V
OUT
=GND to V
DD
, V
DD
=V
DD
Max
CE#=OE#/V
PP
=V
IL,
CE#=OE#/V
PP
=V
IL,
A
9
=V
H
Max
TABLE 9: P
ROGRAM
/E
RASE
DC O
PERATING
C
HARACTERISTICS FOR
SST27SF010/020
V
DD
=5.0V±10%, V
PP
=V
PPH
(Ta=25°C±5°C)
Limits
Symbol Parameter
I
DD
I
PP
I
LI
I
LO
V
H
I
H
V
PPH
V
DD
Erase or Program Current
V
PP
Erase or Program Current
Input Leakage Current
Output Leakage Current
Supervoltage for A
9
Supervoltage Current for A
9
High Voltage for V
PP
Pin
Min
Max Units Test Conditions
30
1
1
1
11.4 12.6
100
11.4 12.6
mA
mA
µA
µA
V
µA
V
T9.1 502
CE#=PGM#=V
IL,
OE#=V
IH
, V
PP
=12V±5%,
V
DD
=V
DD
Max
CE#=PGM#=V
IL,
OE#=V
IH
, V
PP
=12V±5%,
V
DD
=V
DD
Max
V
IN
=GND to V
DD
, V
DD
=V
DD
Max
V
OUT
=GND to V
DD
, V
DD
=V
DD
Max
CE#=OE#=V
IL,
CE#=OE#=V
IL,
A
9
=V
H
Max
©2001 Silicon Storage Technology, Inc.
S71152-02-000 5/01
502
9