256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit Multi-Purpose Flash
SST27SF256 / SST27SF512 / SST27SF010 / SST27SF020
Data Sheet
TABLE 7: PROGRAM/ERASE DC OPERATING CHARACTERISTICS FOR SST27SF256
VDD=5.0V±10%, VPP=VPPH (Ta=25°C±5°C)
Limits
Symbol Parameter
Min Max Units Test Conditions
IDD
IPP
ILI
VDD Erase or Program Current
30
mA CE#=VIL, OE#=VIH, VPP=12V±5%, VDD=VDD Max
mA CE#=VIL, OE#=VIH, VPP=12V±5%, VDD=VDD Max
VPP Erase or Program Current
Input Leakage Current
1
1
1
µA
µA
V
VIN=GND to VDD, VDD=VDD Max
VOUT=GND to VDD, VDD=VDD Max
CE#=OE#=VIL,
ILO
VH
IH
Output Leakage Current
Supervoltage for A9
11.4 12.6
100
Supervoltage Current for A9
High Voltage for VPP Pin
µA
V
CE#=OE#=VIL, A9=VH Max
VPPH
11.4 12.6
T7.1 502
TABLE 8: PROGRAM/ERASE DC OPERATING CHARACTERISTICS FOR SST27SF512
VDD=5.0V±10%, VPP=VPPH (Ta=25°C±5°C)
Limits
Symbol Parameter
Min Max Units Test Conditions
IDD
IPP
ILI
VDD Erase or Program Current
30
mA CE#=VIL, OE#/VPP=12V±5%, VDD=VDD Max
mA CE#=VIL, OE#/VPP=12V±5%, VDD=VDD Max
VPP Erase or Program Current
Input Leakage Current
1
1
1
µA
µA
V
VIN=GND to VDD, VDD=VDD Max
VOUT=GND to VDD, VDD=VDD Max
CE#=OE#/VPP=VIL,
ILO
VH
IH
Output Leakage Current
Supervoltage for A9
11.4 12.6
100
Supervoltage Current for A9
High Voltage for OE#/VPP Pin
µA
V
CE#=OE#/VPP=VIL, A9=VH Max
VPPH
11.4 12.6
T8.1 502
TABLE 9: PROGRAM/ERASE DC OPERATING CHARACTERISTICS FOR SST27SF010/020
VDD=5.0V±10%, VPP=VPPH (Ta=25°C±5°C)
Limits
Symbol Parameter
IDD VDD Erase or Program Current
Min Max Units Test Conditions
30
mA CE#=PGM#=VIL, OE#=VIH, VPP=12V±5%,
VDD=VDD Max
IPP
VPP Erase or Program Current
1
mA CE#=PGM#=VIL, OE#=VIH, VPP=12V±5%,
VDD=VDD Max
ILI
Input Leakage Current
Output Leakage Current
Supervoltage for A9
1
1
µA
µA
V
VIN =GND to VDD, VDD=VDD Max
VOUT =GND to VDD, VDD=VDD Max
CE#=OE#=VIL,
ILO
VH
IH
11.4 12.6
100
Supervoltage Current for A9
High Voltage for VPP Pin
µA
V
CE#=OE#=VIL, A9=VH Max
VPPH
11.4 12.6
T9.1 502
©2001 Silicon Storage Technology, Inc.
S71152-02-000 5/01 502
9
SST [ SILICON STORAGE TECHNOLOGY, INC ]
