512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash
SST27SF512 / SST27SF010 / SST27SF020
Data Sheet
TABLE 6: P
ROGRAM
/E
RASE
DC O
PERATING
C
HARACTERISTICS FOR
SST27SF512
V
DD
=4.5-5.5V, V
PP
=V
PPH
(T
A
=25°C±5°C)
Limits
Symbol Parameter
I
DD
I
PP
I
LI
I
LO
V
H
I
H
V
PPH
V
DD
Erase or Program Current
V
PP
Erase or Program Current
Input Leakage Current
Output Leakage Current
Supervoltage for A
9
Supervoltage Current for A
9
High Voltage for OE#/V
PP
Pin
11.4
11.4
Min
Max Units Test Conditions
30
3
1
10
12
200
12
mA
mA
µA
µA
V
µA
V
T6.5 1152
CE#=V
IL,
OE#/V
PP
=11.4-12V, V
DD
=V
DD
Max
CE#=V
IL,
OE#/V
PP
=11.4-12V, V
DD
=V
DD
Max
V
IN
=GND to V
DD
, V
DD
=V
DD
Max
V
OUT
=GND to V
DD
, V
DD
=V
DD
Max
CE#=OE#/V
PP
=V
IL,
CE#=OE#/V
PP
=V
IL,
A
9
=V
H
Max
TABLE 7: P
ROGRAM
/E
RASE
DC O
PERATING
C
HARACTERISTICS FOR
SST27SF010/020
V
DD
=4.5-5.5V, V
PP
=V
PPH
(T
A
=25°C±5°C)
Limits
Symbol Parameter
I
DD
I
PP
I
LI
I
LO
V
H
I
H
V
PPH
V
DD
Erase or Program Current
V
PP
Erase or Program Current
Input Leakage Current
Output Leakage Current
Supervoltage for A
9
Supervoltage Current for A
9
High Voltage for V
PP
Pin
11.4
11.4
Min
Max Units Test Conditions
30
3
1
10
12
200
12
mA
mA
µA
µA
V
µA
V
T7.5 1152
CE#=PGM#=V
IL,
OE#=V
IH
, V
PP
=11.4-12V,
V
DD
=V
DD
Max
CE#=PGM#=V
IL,
OE#=V
IH
, V
PP
=11.4-12V,
V
DD
=V
DD
Max
V
IN
=GND to V
DD
, V
DD
=V
DD
Max
V
OUT
=GND to V
DD
, V
DD
=V
DD
Max
CE#=OE#=V
IL,
CE#=OE#=V
IL,
A
9
=V
H
Max
TABLE 8: R
ECOMMENDED
S
YSTEM
P
OWER
-
UP
T
IMINGS
Symbol
T
PU-READ1
T
PU-WRITE1
Parameter
Power-up to Read Operation
Power-up to Write Operation
Minimum
100
100
Units
µs
µs
T8.1 1152
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 9: C
APACITANCE (T
A
= 25°C, f=1 Mhz, other pins open)
Parameter
C
I/O
C
IN
1
1
Description
I/O Pin Capacitance
Input Capacitance
Test Condition
V
I/O
= 0V
V
IN
= 0V
Maximum
12 pF
6 pF
T9.0 1152
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 10: R
ELIABILITY
C
HARACTERISTICS
Symbol
N
END1
T
DR1
Parameter
Endurance
Data Retention
Minimum Specification
1000
100
Units
Cycles
Years
Test Method
JEDEC Standard A117
JEDEC Standard A103
T10.3 1152
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2005 Silicon Storage Technology, Inc.
S71152-11-000
9/05
8
SST [ SILICON STORAGE TECHNOLOGY, INC ]
