512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash
SST27SF512 / SST27SF010 / SST27SF020
Data Sheet
TABLE 6: PROGRAM/ERASE DC OPERATING CHARACTERISTICS FOR SST27SF512
DD=4.5-5.5V, VPP=VPPH (TA=25°C±5°C)
V
Limits
Symbol Parameter
Min Max Units Test Conditions
IDD
IPP
ILI
VDD Erase or Program Current
30
mA CE#=VIL, OE#/VPP=11.4-12V, VDD=VDD Max
mA CE#=VIL, OE#/VPP=11.4-12V, VDD=VDD Max
VPP Erase or Program Current
Input Leakage Current
3
1
µA
µA
V
VIN=GND to VDD, VDD=VDD Max
VOUT=GND to VDD, VDD=VDD Max
CE#=OE#/VPP=VIL,
ILO
VH
IH
Output Leakage Current
Supervoltage for A9
10
11.4 12
200
Supervoltage Current for A9
High Voltage for OE#/VPP Pin
µA
V
CE#=OE#/VPP=VIL, A9=VH Max
VPPH
11.4 12
T6.5 1152
TABLE 7: PROGRAM/ERASE DC OPERATING CHARACTERISTICS FOR SST27SF010/020
DD=4.5-5.5V, VPP=VPPH (TA=25°C±5°C)
V
Limits
Symbol Parameter
IDD VDD Erase or Program Current
Min Max Units Test Conditions
30
mA CE#=PGM#=VIL, OE#=VIH, VPP=11.4-12V,
VDD=VDD Max
IPP
VPP Erase or Program Current
3
mA CE#=PGM#=VIL, OE#=VIH, VPP=11.4-12V,
VDD=VDD Max
ILI
Input Leakage Current
Output Leakage Current
Supervoltage for A9
1
10
µA
µA
V
VIN =GND to VDD, VDD=VDD Max
VOUT =GND to VDD, VDD=VDD Max
CE#=OE#=VIL,
ILO
VH
IH
11.4 12
200
Supervoltage Current for A9
High Voltage for VPP Pin
µA
V
CE#=OE#=VIL, A9=VH Max
VPPH
11.4 12
T7.5 1152
TABLE 8: RECOMMENDED SYSTEM POWER-UP TIMINGS
Symbol
Parameter
Minimum
100
Units
1
TPU-READ
Power-up to Read Operation
Power-up to Write Operation
µs
µs
1
TPU-WRITE
100
T8.1 1152
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 9: CAPACITANCE (TA = 25°C, f=1 Mhz, other pins open)
Parameter
Description
Test Condition
VI/O = 0V
Maximum
1
CI/O
I/O Pin Capacitance
Input Capacitance
12 pF
6 pF
1
CIN
VIN = 0V
T9.0 1152
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 10: RELIABILITY CHARACTERISTICS
Symbol
Parameter
Minimum Specification
Units
Cycles
Years
Test Method
1
NEND
Endurance
1000
100
JEDEC Standard A117
JEDEC Standard A103
1
TDR
Data Retention
T10.3 1152
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2005 Silicon Storage Technology, Inc.
S71152-11-000
9/05
8
SST [ SILICON STORAGE TECHNOLOGY, INC ]
