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SST26VF016 参数 Datasheet PDF下载

SST26VF016图片预览
型号: SST26VF016
PDF下载: 下载PDF文件 查看货源
内容描述: 四路串行I / O ( SQI )快闪记忆体 [Serial Quad I/O (SQI) Flash Memory]
分类和应用:
文件页数/大小: 39 页 / 1252 K
品牌: SST [ SILICON STORAGE TECHNOLOGY, INC ]
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Serial Quad I/O (SQI) Flash Memory  
SST26VF016 / SST26VF032  
Data Sheet  
Product Description  
The Serial Quad I/O™ (SQI™) family of flash-memory devices features a 4-bit, multiplexed I/O inter-  
face that allows for low-power, high-performance operation in a low pin-count package. System  
designs using SQI flash devices occupy less board space and ultimately lower system costs.  
All members of the 26 Series, SQI family are manufactured with SST proprietary, high-performance  
CMOS SuperFlash® technology. The split-gate cell design and thick-oxide tunneling injector attain bet-  
ter reliability and manufacturability compared with alternate approaches.  
The SST26VF016/032 significantly improve performance and reliability, while lowering power con-  
sumption. These devices write (Program or Erase) with a single power supply of 2.7-3.6V. The total  
energy consumed is a function of the applied voltage, current, and time of application. Since for any  
given voltage range, the SuperFlash technology uses less current to program and has a shorter erase  
time, the total energy consumed during any Erase or Program operation is less than alternative flash  
memory technologies.  
SST26VF016/032 are offered in both 8-contact WSON (6 mm x 5 mm), and 8-lead SOIC (200 mil)  
packages. See Figure 2 for pin assignments.  
©2010 Silicon Storage Technology, Inc.  
S71359-05-000  
06/10  
2