Serial Quad I/O (SQI) Flash Memory
SST26VF016 / SST26VF032
Data Sheet
DC Characteristics
Table 12:DC Operating Characteristics (VDD = 2.7- 3.6V)
Limits
Symbol Parameter
Min
Typ
Max
Units Test Conditions
IDDR
Read Current
12
18
mA
VDD=VDD Min,
CE#=0.1 VDD/0.9 VDD@33 MHz,
SO=open
IDDW
Program and Erase Cur-
rent
30
mA
CE#=VDD
ISB1
ILI
Standby Current
8
15
1
µA
µA
µA
V
CE#=VDD, VIN=VDD or VSS
VIN=GND to VDD, VDD=VDD Max
VOUT=GND to VDD, VDD=VDD Max
VDD=VDD Min
Input Leakage Current
Output Leakage Current
Input Low Voltage
ILO
VIL
VIH
1
0.8
Input High Voltage
0.7
V
VDD=VDD Max
VDD
VOL
VOH
Output Low Voltage
Output High Voltage
0.2
V
V
IOL=100 µA, VDD=VDD Min
IOH=-100 µA, VDD=VDD Min
VDD
0.2
-
T12.0 1359
Table 13:Capacitance (TA = 25°C, f=1 Mhz, other pins open)
Parameter
Description
Test Condition
VOUT = 0V
Maximum
1
COUT
Output Pin Capacitance
Input Capacitance
12 pF
6 pF
1
CIN
VIN = 0V
T13.0 1359
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
Table 14:Reliability Characteristics
Symbol
Parameter
Endurance
Data Retention
Latch Up
Minimum Specification
Units Test Method
1
NEND
100,000
100
Cycles JEDEC Standard A117
Years JEDEC Standard A103
1
TDR
1
ILTH
100 + IDD
mA
JEDEC Standard 78
T14.0 1359
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
©2010 Silicon Storage Technology, Inc.
S71359-05-000
06/10
32
SST [ SILICON STORAGE TECHNOLOGY, INC ]
