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SST25VF040B-80-4I-S2AE 参数 Datasheet PDF下载

SST25VF040B-80-4I-S2AE图片预览
型号: SST25VF040B-80-4I-S2AE
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位的SPI串行闪存 [4 Mbit SPI Serial Flash]
分类和应用: 闪存
文件页数/大小: 33 页 / 551 K
品牌: SST [ SILICON STORAGE TECHNOLOGY, INC ]
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4 Mbit SPI Serial Flash  
SST25VF040B  
Data Sheet  
Read (25/33 MHz)  
The Read instruction, 03H, supports up to 25 MHz (for  
SST25VF040B-50-xx-xxF) or 33 MHz (for SST25VF040B-  
80-xx-xxE) Read. The device outputs the data starting from  
the specified address location. The data output stream is  
continuous through all addresses until terminated by a low  
to high transition on CE#. The internal address pointer will  
automatically increment until the highest memory address  
is reached. Once the highest memory address is reached,  
the address pointer will automatically increment to the  
beginning (wrap-around) of the address space. Once the  
data from address location 1FFFFFH has been read, the  
next output will be from address location 000000H.  
The Read instruction is initiated by executing an 8-bit com-  
mand, 03H, followed by address bits [A23-A0]. CE# must  
remain active low for the duration of the Read cycle. See  
Figure 5 for the Read sequence.  
CE#  
MODE 3  
0
1
2
3
4
5
6
7
8
15 16  
23  
31  
39  
40  
47 48  
55 56  
63 64  
70  
24  
32  
MODE 0  
SCK  
03  
ADD.  
MSB  
HIGH IMPEDANCE  
ADD.  
ADD.  
SI  
MSB  
N
OUT  
N+1  
N+2  
N+3  
N+4  
D
OUT  
D
D
D
D
OUT  
OUT  
OUT  
SO  
MSB  
1295 ReadSeq.0  
FIGURE 5: Read Sequence  
©2009 Silicon Storage Technology, Inc.  
S71295-05-000  
10/09  
9