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SST25WF080-75-4I-SAE 参数 Datasheet PDF下载

SST25WF080-75-4I-SAE图片预览
型号: SST25WF080-75-4I-SAE
PDF下载: 下载PDF文件 查看货源
内容描述: 8Mbit的1.8V SPI串行闪存 [8Mbit 1.8V SPI Serial Flash]
分类和应用: 闪存
文件页数/大小: 29 页 / 838 K
品牌: SST [ SILICON STORAGE TECHNOLOGY, INC ]
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8Mbit 1.8V SPI Serial Flash
SST25WF080
Advance Information
Hold
The Hold operation enables the hold pin functionality of the
RST#/HOLD# pin. Once set to hold pin mode, the RST#/
HOLD# pin continues functioning as a hold pin until the
device is powered off and then powered on. After a power-
off and power-on, the pin functionality returns to a reset pin
(RST#) mode. See “Enable-Hold (EHLD)” on page 18 for
detailed timing of the Hold instruction.
In the hold mode, serial sequences underway with the SPI
Flash memory are paused without resetting the clocking
sequence. To activate the HOLD# mode, CE# must be in
active low state. The HOLD# mode begins when the SCK
active low state coincides with the falling edge of the
HOLD# signal. The Hold mode ends when the rising edge
of the HOLD# signal coincides with the SCK active low
state. If the falling edge of the HOLD# signal does not coin-
cide with the SCK active low state, then the device enters
Hold mode when the SCK next reaches the active low
state. Similarly, if the rising edge of the HOLD# signal does
not coincide with the SCK active low state, then the device
exits Hold mode when the SCK next reaches the active low
state. See Figure 6 for Hold Condition waveform.
Once the device enters Hold mode, SO will be in high-
impedance state while SI and SCK can be V
IL
or V
IH.
If CE# is driven active high during a Hold condition, the
device returns to standby mode. The device can then be
re-initiated with the command sequences listed in Table 6.
As long as HOLD# signal is low, the memory remains in
the Hold condition. To resume communication with the
device, HOLD# must be driven active high, and CE# must
be driven active low. See Figure 6 for Hold timing.
SCK
HOLD#
Active
Hold
Active
Hold
Active
1203 F05.0
FIGURE 6: Hold Condition Waveform
Write Protection
SST25WF080 provide software Write protection. The
Write Protect pin (WP#) enables or disables the lock-down
function of the status register. The Block-Protection bits
(BP3, BP2, BP1, BP0, and BPL) in the status register pro-
vide Write protection to the memory array and the status
register. See Table 5 for the Block-Protection description.
Write Protect Pin (WP#)
The Write Protect (WP#) pin enables the lock-down func-
tion of the BPL bit (bit 7) in the status register. When WP#
is driven low, the execution of the Write-Status-Register
(WRSR) instruction is determined by the value of the BPL
bit (see Table 3). When WP# is high, the lock-down func-
tion of the BPL bit is disabled.
TABLE 3: Conditions to execute Write-Status-Register (WRSR) Instruction
WP#
L
L
H
BPL
1
0
X
Execute WRSR Instruction
Not Allowed
Allowed
Allowed
T3.0 1203
©2010 Silicon Storage Technology, Inc.
S71203-03-000
04/10
6