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SST25WF040-40-5I-SAE 参数 Datasheet PDF下载

SST25WF040-40-5I-SAE图片预览
型号: SST25WF040-40-5I-SAE
PDF下载: 下载PDF文件 查看货源
内容描述: 512千位/ 1兆位/ 2兆位/ 4Mbit的1.8V SPI串行闪存 [512 Kbit / 1 Mbit / 2 Mbit / 4Mbit 1.8V SPI Serial Flash]
分类和应用: 闪存
文件页数/大小: 32 页 / 882 K
品牌: SST [ SILICON STORAGE TECHNOLOGY, INC ]
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512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit 1.8V SPI Serial Flash  
SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040  
Data Sheet  
Read (20 MHz)  
The Read instruction, 03H, supports up to 20 MHz Read.  
The device outputs a data stream starting from the speci-  
fied address location. The data stream is continuous  
through all addresses until terminated by a low-to-high tran-  
sition on CE#. The internal address pointer automatically  
increments until the highest memory address is reached.  
Once the highest memory address is reached, the address  
pointer automatically increments to the beginning (wrap-  
around) of the address space. For example, for 2 Mbit den-  
sity, once the data from the address location 3FFFFH is  
read, the next output is from address location 000000H.  
The Read instruction is initiated by executing an 8-bit com-  
mand, 03H, followed by address bits A23-A0. CE# must  
remain active low for the duration of the Read cycle. See  
Figure 6 for the Read sequence.  
CE#  
MODE 3  
0
1
2
3
4
5
6
7
8
15 16  
23  
31  
39  
40  
47 48  
55 56  
63 64  
70  
24  
32  
SCK  
MODE 0  
03  
ADD.  
MSB  
HIGH IMPEDANCE  
ADD.  
ADD.  
SI  
MSB  
N
N+1  
N+2  
N+3  
N+4  
D
D
D
D
D
SO  
OUT  
OUT  
OUT  
OUT  
OUT  
MSB  
1328 Fx6.0  
FIGURE 6: Read Sequence  
High-Speed-Read (40 MHz)  
The High-Speed-Read instruction supporting up to 40 MHz  
Read is initiated by executing an 8-bit command, 0BH, fol-  
lowed by address bits [A23-A0] and a dummy byte. CE#  
must remain active low for the duration of the High-Speed-  
Read cycle. See Figure 7 for the High-Speed-Read  
sequence.  
addresses until terminated by a low-to-high transition on  
CE#. The internal address pointer will automatically incre-  
ment until the highest memory address is reached. Once  
the highest memory address is reached, the address  
pointer will automatically increment to the beginning (wrap-  
around) of the address space. For example, for 2 Mbit den-  
sity, once the data from address location 3FFFFH is read,  
the next output will be from address location 000000H.  
Following a dummy cycle, the High-Speed-Read instruc-  
tion outputs the data starting from the specified address  
location. The data output stream is continuous through all  
CE#  
MODE 3  
MODE 0  
0
1 2 3 4 5 6 7 8  
15 16  
23 24  
31 32  
39 40  
47 48  
55 56  
63 64  
80  
71 72  
SCK  
0B  
ADD.  
ADD.  
ADD.  
X
SI  
MSB  
N
N+1  
N+2  
N+3  
N+4  
HIGH IMPEDANCE  
D
D
D
D
D
SO  
OUT  
OUT  
OUT  
OUT  
OUT  
MSB  
1328 F07.0  
FIGURE 7: High-Speed-Read Sequence  
©2009 Silicon Storage Technology, Inc.  
S71328-08-000  
11/09  
12