512 Kbit / 1 Mbit / 2 Mbit / 4Mbit 1.8V SPI Serial Flash
SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040
SST25VF016B16Mb Serial Peripheral Interface (SPI) flash memory
Data Sheet
FEATURES:
• Single Voltage Read and Write Operations
– 1.65-1.95V
• Serial Interface Architecture
– SPI Compatible: Mode 0 and Mode 3
• High Speed Clock Frequency
– 40MHz
• Superior Reliability
– Endurance: 100,000 Cycles
– Greater than 100 years Data Retention
• Ultra-Low Power Consumption:
– Active Read Current: 2 mA (typical @ 20MHz)
– Standby Current: 2 µA (typical)
• Flexible Erase Capability
– Uniform 4 KByte sectors
– Uniform 32 KByte overlay blocks
– Uniform 64 KByte overlay blocks
(2 Mbit and 4 Mbit only)
• Fast Erase and Byte-Program:
– Chip-Erase Time: 125 ms (typical)
– Sector-/Block-Erase Time: 62ms (typical)
– Byte-Program Time: 50 µS (typical)
• Auto Address Increment (AAI) Programming
– Decrease total chip programming time over
Byte-Program operations
• End-of-Write Detection
– Software polling the BUSY bit in Status Register
– Busy Status readout on SO pin
• Reset Pin (RST#) or Programmable Hold Pin
(HOLD#) option
– Hardware Reset pin as default
– Hold pin option to suspend a serial sequence
without deselecting the device
• Write Protection (WP#)
– Enables/Disables the Lock-Down function of the
status register
• Software Write Protection
– Write protection through Block-Protection bits in
status register
• Temperature Range
– Industrial: -40°C to +85°C
• Packages Available
– 8-lead SOIC (150 mils)
– 8-contact WSON (5mm x 6mm)
• All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
The SST25WF512, SST25WF010, SST25WF020, and
SST25WF040 are members of the Serial Flash 25 Series
family and feature a four-wire, SPI-compatible interface that
allows for a low pin-count package which occupies less
board space and ultimately lowers total system costs.
SST25WF512/010/020/040 SPI serial flash memories are
manufactured with SST proprietary, high-performance
CMOS SuperFlash technology. The split-gate cell design
and thick-oxide tunneling injector attain better reliability and
manufacturability compared with alternate approaches.
The SST25WF512/010/020/040 devices significantly
improve performance and reliability, while lowering power
consumption. The devices write (Program or Erase) with a
single power supply of 1.65-1.95V for SST25WF512/010/
020/040. The total energy consumed is a function of the
applied voltage, current, and time of application. Since for
any given voltage range, the SuperFlash technology uses
less current to program and has a shorter erase time, the
total energy consumed during any Erase or Program oper-
ation is less than alternative flash memory technologies.
The SST25WF512/010/020/040 devices are offered in
both 8-lead SOIC and an 8-contact WSON packages. See
Figure 2 for the pin assignment.
©2009 Silicon Storage Technology, Inc.
S71328-08-000
11/09
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
SST [ SILICON STORAGE TECHNOLOGY, INC ]
