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SST25VF080B-80-4I-S2AE 参数 Datasheet PDF下载

SST25VF080B-80-4I-S2AE图片预览
型号: SST25VF080B-80-4I-S2AE
PDF下载: 下载PDF文件 查看货源
内容描述: 8兆位的SPI串行闪存 [8 Mbit SPI Serial Flash]
分类和应用: 闪存
文件页数/大小: 32 页 / 752 K
品牌: SST [ SILICON STORAGE TECHNOLOGY, INC ]
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8 Mbit SPI Serial Flash
SST25VF080B
Data Sheet
Read (25/33 MHz)
The Read instruction, 03H, supports up to 25 MHz (for
SST25VF080B-50-xx-xxxx)
or
33
MHz
(for
SST25VF080B-80-xx-xxxx) Read. The device outputs the
data starting from the specified address location. The data
output stream is continuous through all addresses until ter-
minated by a low to high transition on CE#. The internal
address pointer will automatically increment until the high-
est memory address is reached. Once the highest memory
address is reached, the address pointer will automatically
increment to the beginning (wrap-around) of the address
space. Once the data from address location 1FFFFFH has
been read, the next output will be from address location
000000H.
The Read instruction is initiated by executing an 8-bit com-
mand, 03H, followed by address bits [A23-A0]. CE# must
remain active low for the duration of the Read cycle. See
Figure 5 for the Read sequence.
CE#
MODE 3
0 1 2 3 4 5 6 7 8
15 16
23 24
31 32
39 40
47
48
55 56
63 64
70
SCK
MODE 0
SI
MSB
SO
03
ADD.
MSB
ADD.
ADD.
N
D
OUT
MSB
1296 ReadSeq_0.0
HIGH IMPEDANCE
N+1
D
OUT
N+2
D
OUT
N+3
D
OUT
N+4
D
OUT
FIGURE 5: Read Sequence
©2010 Silicon Storage Technology, Inc.
S71296-04-000
01/10
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