16 Mbit SPI Serial Flash
SST25VF016B
A Microchip Technology Company
Data Sheet
Table 10:DC Operating Characteristics
Limits
Symbol Parameter
Min
Max Units Test Conditions
IDDR
IDDR2
IDDR3
IDDW
ISB
Read Current
10
15
20
30
20
1
mA CE#=0.1 VDD/0.9 VDD@25 MHz, SO=open
mA CE#=0.1 VDD/0.9 VDD@50 MHz, SO=open
mA CE#=0.1 VDD/0.9 VDD@80 MHz, SO=open
mA CE#=VDD
Read Current
Read Current
Program and Erase Current
Standby Current
µA
µA
µA
V
CE#=VDD, VIN=VDD or VSS
VIN=GND to VDD, VDD=VDD Max
VOUT=GND to VDD, VDD=VDD Max
VDD=VDD Min
ILI
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output Low Voltage
Output High Voltage
ILO
1
VIL
0.8
VIH
0.7 VDD
VDD-0.2
V
VDD=VDD Max
VOL
VOL2
VOH
0.2
0.4
V
IOL=100 µA, VDD=VDD Min
IOL=1.6 mA, VDD=VDD Min
IOH=-100 µA, VDD=VDD Min
V
V
T10.0 1271
Table 11:Recommended System Power-up Timings
Symbol
Parameter
Minimum
Units
1
TPU-READ
VDD Min to Read Operation
VDD Min to Write Operation
10
10
µs
µs
1
TPU-WRITE
T11.0 1271
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
Table 12:Capacitance (TA = 25°C, f=1 Mhz, other pins open)
Parameter
Description
Test Condition
VOUT = 0V
Maximum
12 pF
1
COUT
Output Pin Capacitance
Input Capacitance
1
CIN
VIN = 0V
6 pF
T12.0 1271
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
Table 13:Reliability Characteristics
Symbol
Parameter
Endurance
Data Retention
Latch Up
Minimum Specification
Units Test Method
1
NEND
10,000
100
Cycles JEDEC Standard A117
Years JEDEC Standard A103
1
TDR
1
ILTH
100 + IDD
mA
JEDEC Standard 78
T13.0 1271
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
©2011 Silicon Storage Technology, Inc.
S71271-04-000
01/11
23
SST [ SILICON STORAGE TECHNOLOGY, INC ]
