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SST25VF512_10 参数 Datasheet PDF下载

SST25VF512_10图片预览
型号: SST25VF512_10
PDF下载: 下载PDF文件 查看货源
内容描述: 512 Kbit的SPI串行闪存 [512 Kbit SPI Serial Flash]
分类和应用: 闪存
文件页数/大小: 23 页 / 276 K
品牌: SST [ SILICON STORAGE TECHNOLOGY, INC ]
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512 Kbit SPI Serial Flash  
SST25VF512  
Data Sheet  
Write-Enable (WREN)  
The Write-Enable (WREN) instruction sets the Write-  
Enable-Latch bit to 1 allowing Write operations to occur.  
The WREN instruction must be executed prior to any Write  
(Program/Erase) operation. CE# must be driven high  
before the WREN instruction is executed.  
CE#  
MODE 3  
0
1
2
3
4
5
6
7
MODE 0  
SCK  
06  
SI  
MSB  
HIGH IMPEDANCE  
SO  
1192 F35.6  
FIGURE 11: WRITE ENABLE (WREN) SEQUENCE  
Write-Disable (WRDI)  
The Write-Disable (WRDI) instruction resets the Write-  
Enable-Latch bit and AAI bit to 0 disabling any new Write  
operations from occurring. CE# must be driven high before  
the WRDI instruction is executed.  
CE#  
MODE 3  
0
1
2
3
4
5
6
7
MODE 0  
SCK  
04  
SI  
MSB  
HIGH IMPEDANCE  
SO  
1192 F36.6  
FIGURE 12: WRITE DISABLE (WRDI) SEQUENCE  
Enable-Write-Status-Register (EWSR)  
The Enable-Write-Status-Register (EWSR) instruction  
arms the Write-Status-Register (WRSR) instruction and  
opens the status register for alteration. The Enable-Write-  
Status-Register instruction does not have any effect and  
will be wasted, if it is not followed immediately by the Write-  
Status-Register (WRSR) instruction. CE# must be driven  
low before the EWSR instruction is entered and must be  
driven high before the EWSR instruction is executed.  
©2005 Silicon Storage Technology, Inc.  
S71192-09-000  
1/06  
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