2 Mbit / 4 Mbit SPI Serial Flash
SST25LF020A / SST25LF040A
Data Sheet
ELECTRICAL SPECIFICATIONS
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum Stress
Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at
these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Expo-
sure to absolute maximum stress rating conditions may affect device reliability.)
Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to VDD+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-2.0V to VDD+2.0V
Package Power Dissipation Capability (Ta = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
Output Short Circuit Current1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
1. Output shorted for no more than one second. No more than one output shorted at a time.
OPERATING RANGE:
AC CONDITIONS OF TEST
Input Rise/Fall Time . . . . . . . . . . . . . . . 5 ns
Output Load . . . . . . . . . . . . . . . . . . . . . CL = 30 pF
See Figures 20 and 21
Range
Ambient Temp
0°C to +70°C
VDD
Commercial
Industrial
Extended
3.0-3.6V
3.0-3.6V
3.0-3.6V
-40°C to +85°C
-20°C to +85°C
TABLE 7: DC OPERATING CHARACTERISTICS VDD = 3.0-3.6V
Limits
Symbol Parameter
Min
Max Units Test Conditions
IDDR
IDDW
ISB
Read Current
10
30
15
1
mA
mA
µA
µA
µA
V
CE#=0.1 VDD/0.9 VDD@20 MHz, SO=open
CE#=VDD
Program and Erase Current
Standby Current
CE#=VDD, VIN=VDD or VSS
VIN=GND to VDD, VDD=VDD Max
VOUT=GND to VDD, VDD=VDD Max
VDD=VDD Min
ILI
Input Leakage Current
Output Leakage Current
Input Low Voltage
ILO
1
VIL
0.8
VIH
VOL
VOH
Input High Voltage
Output Low Voltage
Output High Voltage
0.7 VDD
VDD-0.2
V
VDD=VDD Max
0.2
V
IOL=100 µA, VDD=VDD Min
IOH=-100 µA, VDD=VDD Min
V
T7.0 1242
TABLE 8: RECOMMENDED SYSTEM POWER-UP TIMINGS
Symbol
Parameter
Minimum
Units
1
TPU-READ
VDD Min to Read Operation
VDD Min to Write Operation
10
10
µs
µs
1
TPU-WRITE
T8.0 1242
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 9: CAPACITANCE (Ta = 25°C, f=1 Mhz, other pins open)
Parameter
Description
Test Condition
VOUT = 0V
Maximum
1
COUT
Output Pin Capacitance
Input Capacitance
12 pF
6 pF
1
CIN
VIN = 0V
T9.0 1242
1/06
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2006 Silicon Storage Technology, Inc.
S71242-05-000
18
SST [ SILICON STORAGE TECHNOLOGY, INC ]
