2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP07
Preliminary Specifications
10 µF
V
CC
R2 = 50 Ω*
0.1 µF
6.8 nH
0.1 µF
0.1 µF
16
15
14
13
1
2
3
4
12
11
10
9
47pF
50Ω / 60–70 mil
47 pF
50 Ω / 0–20 mil
RF
IN
RF
OUT
2.0 pF
1.5 nH
Bias Circuit
R1 = 110 Ω
VREG
22 pF
5
6
7
8
Det
10 pF
Suggested operation conditions:
1. V = 3.3V
CC
2. Center slug to RF ground
3. VREG = 2.85V with R1=110Ω
* Suggested for robustness under input overdrive condition
when working with some transceivers.
1321 Schematic 1.1
FIGURE 12: Typical Schematic for High-Power/High-Efficiency 802.11b/g Applications
©2006 Silicon Storage Technology, Inc.
S71321-00-000
5/06
11