SSM4226M/GM
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=250uA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
30
-
-
0.03
-
-
V
∆B VDSS/∆Tj
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=6A
VGS=4.5V, ID=4A
-
V/°C
mΩ
RDS(ON)
-
18
-
1
-
-
-
28
mΩ
V
VGS(th)
gfs
Gate Threshold Voltage
VDS=VGS, ID=250uA
VDS=10V, ID=6A
VDS=30V, VGS=0V
VDS=24V ,VGS=0V
VGS= ± 20V
ID=8A
3
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
15
-
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
-
1
-
-
25
IGSS
Qg
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
-
-
±100
-
20
5
30
-
Qgs
Qgd
td(on)
tr
VDS=24V
-
VGS=4.5V
-
12
12
8
-
VDS=15V
-
-
ID=1A
-
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω ,VGS=10V
RD=15Ω
-
31
12
-
-
-
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
-
1450 2320
VDS=25V
-
320
230
-
-
f=1.0MHz
-
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
trr
Forward On Voltage2
IS=1.7A, VGS=0V
IS=8A, VGS=0V,
dI/dt=100A/µs
-
-
-
-
1.2
V
Reverse Recovery Time
Reverse Recovery Charge
27
18
-
-
ns
nC
Qrr
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135°C/Wwhen mounted on Min. copper pad.
8/06/2004 Rev.1.02
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