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M25PE10 参数 Datasheet PDF下载

M25PE10图片预览
型号: M25PE10
PDF下载: 下载PDF文件 查看货源
内容描述: 1和2兆位,低电压,页面可擦除串行闪存产品与字节变性, 33兆赫的SPI总线,标准引脚输出 [1 and 2 Mbit,Low Voltage,Page-Erasable Serial Flash Memories with Byte-Alterability,33 MHz SPI Bus,Standard Pin-out]
分类和应用: 闪存
文件页数/大小: 37 页 / 483 K
品牌: SST [ SILICON STORAGE TECHNOLOGY, INC ]
 浏览型号M25PE10的Datasheet PDF文件第14页浏览型号M25PE10的Datasheet PDF文件第15页浏览型号M25PE10的Datasheet PDF文件第16页浏览型号M25PE10的Datasheet PDF文件第17页浏览型号M25PE10的Datasheet PDF文件第19页浏览型号M25PE10的Datasheet PDF文件第20页浏览型号M25PE10的Datasheet PDF文件第21页浏览型号M25PE10的Datasheet PDF文件第22页  
M25PE10, M25PE20  
Page Write (PW)  
The Page Write (PW) instruction allows Bytes to  
be written in the memory. Before it can be accept-  
ed, a Write Enable (WREN) instruction must previ-  
ously have been executed. After the Write Enable  
(WREN) instruction has been decoded, the device  
sets the Write Enable Latch (WEL).  
The Page Write (PW) instruction is entered by  
driving Chip Select (S) Low, followed by the in-  
struction code, three address Bytes and at least  
one data Byte on Serial Data Input (D). The rest of  
the page remains unchanged if no power failure  
occurs during this write cycle.  
requested addresses without having any effects  
on the other Bytes of the same page.  
For optimized timings, it is recommended to use  
the Page Write (PW) instruction to write all con-  
secutive targeted Bytes in a single sequence ver-  
sus using several Page Write (PW) sequences  
with each containing only a few Bytes (see AC  
Characteristics (33MHz operation)).  
Chip Select (S) must be driven High after the  
eighth bit of the last data Byte has been latched in,  
otherwise the Page Write (PW) instruction is not  
executed.  
As soon as Chip Select (S) is driven High, the self-  
The Page Write (PW) instruction performs a page  
erase cycle even if only one Byte is updated.  
timed Page Write cycle (whose duration is t ) is  
PW  
initiated. While the Page Write cycle is in progress,  
the Status Register may be read to check the val-  
ue of the Write In Progress (WIP) bit. The Write In  
Progress (WIP) bit is 1 during the self-timed Page  
Write cycle, and is 0 when it is completed. At some  
unspecified time before the cycle is complete, the  
Write Enable Latch (WEL) bit is reset.  
If the 8 least significant address bits (A7-A0) are  
not all zero, all transmitted data exceeding the ad-  
dressed page boundary roll over, and are written  
from the start address of the same page (the one  
whose 8 least significant address bits (A7-A0) are  
all zero). Chip Select (S) must be driven Low for  
the entire duration of the sequence.  
A Page Write (PW) instruction applied to a page  
that is Hardware Protected is not executed.  
The instruction sequence is shown in Figure 14.  
Any Page Write (PW) instruction, while an Erase,  
Program or Write cycle is in progress, is rejected  
without having any effects on the cycle that is in  
progress.  
If more than 256 Bytes are sent to the device, pre-  
viously latched data are discarded and the last 256  
data Bytes are guaranteed to be written correctly  
within the same page. If less than 256 Data Bytes  
are sent to device, they are correctly written at the  
Figure 14. Page Write (PW) Instruction Sequence  
S
0
1
2
3
4
5
6
7
8
9
10  
28 29 30 31 32 33 34 35 36 37 38 39  
C
D
Instruction  
24-Bit Address  
Data Byte 1  
23 22 21  
MSB  
3
2
1
0
7
6
5
4
3
2
0
1
MSB  
S
C
40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55  
Data Byte 2  
Data Byte 3  
Data Byte n  
7
6
5
4
3
2
0
7
6
5
4
3
2
0
7
6
5
4
3
2
0
1
1
1
D
MSB  
MSB  
MSB  
AI04045  
Note: 1. Address bits A23 to A18 are Don’t Care in the M25PE20. Address bits A23 to A17 are Don’t Care in the M25PE10.  
2. 1 n 256  
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