SDR6638, SDR6642, SDR6643,
& SDR4150 SERIES
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
300 mA
Designer’s Data Sheet
50 - 125 VOLTS
Part Number/Ordering Information 1/
4.5 - 6.0 nsec HYPER FAST RECOVERY
RECTIFIER
__ __
SDR____
Screening 2/
__ = Not Screened
TX = TX Level
│
│
│
│
│
│
│
│
│
│
│
└
│
│
│
│
│
│
└
└
FEATURES:
Hyper Fast Reverse Recovery Time 4.5 - 6 ns
Max
Hermetically Sealed
Planar Passivated Chip
For High Efficiency Applications
Available in Axial, Subminiature Round Tab
& Subminiature Square Tab Versions
TX, TXV, and S-Level Screening Available2/
Replacement for 1N6638, 1N6642, 1N6643, &
1N4150-1
TXV = TXV
S = S Level (for SM, use –S)
•
Package Type
__ = Axial Leaded
SM = Surface Mount Round Tab
(MELF)
SMS = Surface Mount Square Tab
•
•
•
•
•
•
Device Type ( VRWM )
6638 = 125 V
6642 = 75 V
•
Metallurgical Class 3 Bond
6643 = 50 V
4150 = 75 V
MAXIMUM RATINGS 3/
RATING
SYMBOL
VALUE
UNIT
SDR6638
SDR6642
SDR6643
SDR4150
125
75
50
Peak Repetitive Reverse Voltage
DC Blocking Voltage
VRWM
VR
Volts
75
Average Rectified Forward Current
(Resistive Load, 60 Hz, Sine Wave, TC = 25°C)
IO
300
mAmps
Peak Surge Current
2.5
IFSM
Amps
°C
(8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to reach
equilibrium between pulses, TC = 25°C)
-65 to +175
Operating & Storage Temperature
TOP and TSTG
Thermal Resistance
SM and SMS- Junction to End Tab
Axial- Junction to Lead @ .375”
RθJE
RθJL
100
325
°C/W
NOTES:
1/ For Ordering Information, Price, and Availability- Contact
Factory.
Axial Leaded
SMS
SM
2/ Screening Based on MIL-PRF-19500. Screening Flows
Available on Request.
3/ Unless Otherwise Specified, All Electrical Characteristics
@25ºC.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0126B
DOC
SSOUSA [ SOLID STATE OPTRONIC ]
