SHANGHAI SUNRISE ELECTRONICS CO., LTD.
XR-85
SILICON EPITAXIAL
PLANAR SWITCHING DIODE
REVERSE VOLTAGE: 20V
FORWARD CURRENT: 100mA
FEATURES
• Small glass structure ensures high reliability
• Low leakage
• High temperature soldering guaranteed:
250
o
C/10S/9.5mm lead length
at 5 lbs tension
TECHNICAL
SPECIFICATION
DO - 34
MECHANICAL DATA
• Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
• Case: Glass,hermetically sealed
• Polarity: Color band denotes cathode
• Mounting position: Any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND CHARACTERISTICS
(Ratings at 25
o
C ambient temperature unless otherwise specified)
RATINGS
Reverse Voltage
Peak Reverse Voltage
Forward Current (average)
Forward Voltage (I
F
=10mA)
Reverse Current (V
R
=20V)
Reverse Current (V
R
=20V,T
J
=100
o
C)
Capacitance
(Note 1)
Forward Differential Resistor (I
F
=10mA, f=100MHz)
Thermal Resistance
(junction to ambient)
(Note 2)
SYMBOL
V
R
V
RM
I
O
V
F
I
R1
I
R2
C
t
r
F
R
θ
(ja)
VALUE
20
35
100
1
100
10
1.5
0.6
0.35
UNITS
V
V
mA
V
nA
µA
pF
Ω
o
C/mW
o
T
STG,
T
J
Operating Junction and Storage Temperature Range
-55 ~ +150
Notes:
1: V
R
=10V, f=1 MHz
2: Valid provided that leads are kept at ambient temperature at a distance of 8mm from case.
C
http://www.sse-diode.com
SSE [ SHANGHAI SUNRISE ELECTRONICS ]
