SSR20C Series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
20 A / 1200 V
Schottky Silicon Carbide
Centertap Rectifier
Designer’s Data Sheet
Part Number / Ordering Information 1/
FEATURES:
SSR20C __ __ __ __
Screening 2/
└
__ = Not Screened
TX = TX Level
TXV = TXV
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│
│
└
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1200 Volt Silicon Carbide Schottky Rectifier
Average Output Current 20 Amps
No Reverse Recovery
No Forward Recovery
No Switching Time Change Over
Temperature
Small Package Size
TX, TXV, and Space Level Screening
Available. Consult Factory.
S = S Level
Package
S = SMD1
M = TO-254
Configuration CT = Centertap
•
•
Voltage 100 = 1000 V
120 = 1200 V
MAXIMUM RATINGS3/
Symbol
Value
Units
Volts
SSR20C100CT
SSR20C120CT
VRRM
VR
1000
1200
Peak Repetitive and Peak Reverse Voltage
Average Rectified Forward Current
(Resistive Load, 60 Hz, Sine Wave)
Per Leg
Total
10
20
IO
Amps
Peak Surge Current
IFSM
Amps
120
(8.3 ms Pulse, Half Sine Wave, TA = 25oC)
Operating & Storage Temperature
Junction Temperature
TOP & Tstg
TJ
oC
oC
-55 to +250
-55 to +250
Maximum Thermal Resistance
(Junction to Case)
oC/W
1.0
RθJC
SMD1 (S)
TO-254 (M)
NOTES:
* Pulse Test: Pulse Width = 300 μsec, Duty Cycle = 2%
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screened to MIL-PRF-19500.
3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: SH0049B
DOC