SFL630 series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics3/
Symbol
BVDSS
Min Typ Max Units
Drain to Source Breakdown Voltage
VGS = 0V, ID =0.25 mA
200
225
-
V
VGS = 5V, ID = 5A, Tj= 25oC
VGS = 5V, ID = 10A, Tj= 25oC
VGS = 4V, ID = 5A, Tj= 25oC
-
-
-
-
200
250
200
400
400
500
-
-
Drain to Source On State Resistance
RDS(on)
mΩ
V
GS = 5V, ID = 10A, Tj= 125oC
DS = VGS, ID = 1mA, Tj= 25oC
V
1.0
0.5
-
1.6
1.0
2.0
2.0
-
3.0
Gate Threshold Voltage
Gate to Source Leakage
V
DS = VGS, ID = 1mA, Tj= 125oC
VGS(th)
V
VDS = VGS, ID = 1mA, Tj= -55oC
VGS = ±10V, Tj= 25oC
-
-
1
10
±100
±200
IGSS
IDSS
gfs
nA
VGS = ±10V, Tj= 125oC
VDS = 200V, VGS = 0V, Tj = 25oC
VDS = 160V, VGS = 0V, Tj = 125oC
-
-
0.01
100
1
250
A
A
Zero Gate Voltage Drain Current
Forward Transconductance
V
DS = 50V, ID = 5.4A, Tj = 25oC
3
6
-
Mho
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
V
GS = 10V
Qg
Qgs
Qgd
-
-
-
42
6
15
70
10
24
VDS = 100V
nC
ID = 8A
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
V
GS = 10V
td(on)
tr
td(off)
tf
-
-
-
-
7.5
15
75
30
15
30
110
45
VDS = 100V
nsec
V
ID = 9A
RG = 6
Diode Forward Voltage
IF = 10A, VGS = 0V
VSD
-
0.85
2.0
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
trr
Qrr
-
-
190
1
350
-
nsec
uC
IF = 9A, di/dt = 100A/usec
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
V
GS = 0V
DS = 25V
f = 1 MHz
Ciss
Coss
Crss
-
-
-
1100
450
60
-
-
-
pF
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0057A
DOC
SSDI [ SOLID STATES DEVICES, INC ]
