Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFR130 series
Symbol
V
GS
= 0V, I
D
=0.25 mA
V
GS
= 10V, I
D
= 30A, Tj= 25
o
C
V
GS
= 10V, I
D
= 30A, Tj= 125
o
C
V
GS
= 10V, I
D
= 30A, Tj= 25
o
C
V
GS
= 10V, I
D
= 30A, Tj= 125
o
C
V
DS
= V
GS
, I
D
= 50A, Tj= 25
o
C
V
DS
= V
GS
, I
D
= 50A, Tj= 125
o
C
V
DS
= V
GS
, I
D
= 50A, Tj= -55
o
C
V
GS
= ±20V, Tj= 25
o
C
V
GS
= ±20V, Tj= 125
o
C
V
DS
= -100V, V
GS
= 0V, T
j
= 25
o
C
V
DS
= 100V, V
GS
= 0V, T
j
= 125
o
C
V
DS
= 10V, I
D
= 30A, T
j
= 25
o
C
V
GS
= 10V
V
DS
= 50V
I
D
= 10A
V
GS
= 10V
V
DS
= 50V
I
D
= 10A
R
G
= 15
I
F
= 10A, V
GS
= 0V
I
F
= 10A, di/dt = 100A/usec
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
BV
DSS
R
DS(on)
R
DS(on)
V
GS(th)
I
GSS
I
DSS
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
rr
Q
rr
C
iss
C
oss
C
rss
Electrical Characteristics
3/
Drain to Source Breakdown Voltage
Drain to Source On State Resistance,
SFR130J
Drain to Source On State Resistance,
SFR130G, SFR130S.5
Gate Threshold Voltage
Min
100
-
-
-
-
2.5
1.5
-
-
-
-
15
-
-
-
-
-
-
-
-
-
-
-
-
Typ Max Units
- 110
24
40
20
35
3.5
2.5
4.0
5
10
0.05
3
20
52
25
12
30
40
45
40
0.85
85
350
2400
350
80
-
30
-
25
-
4.5
-
5.0
±100
±200
1
100
-
80
-
-
45
60
100
75
2.0
-
-
3500
400
120
V
mΩ
mΩ
V
nA
A
A
Mho
nC
Gate to Source Leakage
Zero Gate Voltage Drain Current
Forward Transconductance
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
Diode Forward Voltage
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
nsec
V
nsec
nC
pF
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0055A
DOC
SSDI [ SOLID STATES DEVICES, INC ]
