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FT0044A 参数 Datasheet PDF下载

FT0044A图片预览
型号: FT0044A
PDF下载: 下载PDF文件 查看货源
内容描述: [Avalanche Rated N-channel MOSFET]
分类和应用:
文件页数/大小: 2 页 / 145 K
品牌: SSDI [ SOLID STATES DEVICES, INC ]
 浏览型号FT0044A的Datasheet PDF文件第1页  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
SFF100N20/3T  
Electrical Characteristics5/  
Symbol Min  
Typ Max Units  
Drain to Source Breakdown Voltage  
V
GS = 0V, ID = 250μA  
BVDSS  
200  
220  
––  
V
Drain to Source On State  
Resistance  
V
V
GS = 10V, ID = 48A, Tj= 25oC  
––  
––  
––  
25  
50  
65  
30  
65  
––  
GS = 10V, ID = 48A, Tj=125oC  
RDS(on)  
mΩ  
VGS = 10V, ID = 48A, Tj= 175oC  
VDS = VGS, ID = 4.0mA, Tj= 25oC  
VDS = VGS, ID = 4.0mA, Tj= 125oC  
VDS = VGS, ID = 4.0mA, Tj= -55oC  
2.5  
1.5  
––  
4.5  
3.6  
5
5.0  
––  
6
Gate Threshold Voltage  
Gate to Source Leakage  
VGS(th)  
V
VGS = ±20V, Tj= 25oC  
––  
––  
10  
30  
±100  
––  
IGSS  
nA  
VGS = ±20V, Tj= 125oC  
V
DS = 200V, VGS = 0V, Tj = 25oC  
VDS = 200V, VGS = 0V, Tj = 125oC  
DS = 200V, VGS = 0V, Tj = 150oC  
DS = 10V, ID = 48A, Tj = 25oC  
GS = 10V  
––  
––  
––  
0.01  
2.5  
25  
25  
150  
––  
μA  
μA  
μA  
Zero Gate Voltage Drain Current  
Forward Transconductance  
IDSS  
gfs  
V
V
25  
50  
––  
Mho  
Total Gate Charge  
Gate to Source Charge  
Gate to Drain Charge  
V
Qg  
Qgs  
Qgd  
––  
––  
––  
150  
45  
75  
250  
65  
120  
VDS = 100V  
nC  
ID = 48A  
Turn on Delay Time  
Rise Time  
Turn off Delay Time  
Fall Time  
V
V
GS = 10V  
DS = 100V  
ID = 48A  
td(on)  
tr  
td(off)  
tf  
––  
––  
––  
––  
50  
50  
110  
50  
75  
75  
135  
75  
nsec  
V
RG = 4.0, pw= 3us  
Diode Forward Voltage  
IF = 48A, VGS = 0V  
VSD  
––  
0.90  
1.5  
IF = 10A, di/dt = 100A/usec  
IF = 10A, di/dt = 100A/usec  
IF = 10A, di/dt = 100A/usec  
IF = 25A, di/dt = 100A/usec  
IF = 25A, di/dt = 100A/usec  
IF = 25A, di/dt = 100A/usec  
trr1  
Irm1  
Qrr1  
trr2  
Irm2  
Qrr2  
––  
––  
––  
––  
––  
––  
190  
11  
1
310  
17  
2.5  
250  
––  
––  
––  
––  
––  
nsec  
A
μC  
nsec  
A
Diode Reverse Recovery Time  
Reverse Recovery Charge  
μC  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
V
GS = 0V  
Ciss  
Coss  
Crss  
––  
––  
––  
5300  
1050  
175  
––  
––  
––  
VDS = 25V  
f = 1 MHz  
pF  
Package Outline: TO-3  
Pin Out:  
Pin 1: GATE  
Pin 2: SOURCE  
Pin 3: DRAIN  
Note 1:  
P/N: SFF80N20/3T:  
Pin Diameter: 0.063”  
0.058”  
Note 2:  
This dimension shall be measured at points  
.050 - .055” below the seating plane. When  
gage is not used, measurement will be made  
at seating plane. This outline does not meet  
the minimum criteria established by JS-10 for  
registration.  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: FT0044A  
DOC