2SPT6341SD
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
.170
.011
MultiEpitaxial Planar
NPN Power Transistor Die
Features:
•
Recommended replacement for the 2N6338 – 6341 series
•
Die Size: 170 x 180 Mils
•
Die Thickness: 260 – 330 µm
•
Bonding Area:
Emitter: 30 x 60 Mils
Base: 40 x 50 Mils
•
Maximum Recommended Wire Bonding:
Emitter: Al (15 Mils Dia)
Base: Al (15 Mils Dia)
•
Metallization:
Top:
60,000Å Al
Bottom: 5,500Å Au / Cr / Ni / Au
E
.180
B
Maximum Ratings
4/
Symbol
Value
Units
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
@ TC = 25ºC
Derate above 25ºC
Operating & Storage Temperature
Maximum Thermal Resistance
Electrical Characteristic
4/
Collector – Emitter
Breakdown Voltage
Collector – Cutoff Current
Collector – Cutoff Current
Emitter – Cutoff Current
DC Current Gain *
I
C
= 50mA
V
CE
= 125 V; V
BE
= 1.5 V
V
CE
= 125 V; V
BE
= 1.5 V; T= 150ºC
V
CB
= 180 V
V
EB
= 6 V
V
CE
= 2V, I
C
= 500mA
V
CE
= 2V, I
C
= 10A
V
CE
= 2V, I
C
= 25A
I
C
= 10A, I
B
= 1 A
I
C
= 25A, I
B
= 2.5A
I
C
= 10A, I
B
= 1A
I
C
= 25A, I
B
= 2.5A
V
CEO
V
CBO
V
EBO
I
C max
I
B
P
D
Top & Tstg
Junction to Case
R
θJC
Symbol
BV
CEO
3/
I
CEX
3/
Min
125
––
––
––
50
30
12
––
––
––
––
125
180
6
25
50
10
200
1.143
-65 to +200
0.875
Typ
135
0.020
—
0.020
0.001
120
185
120
0.35
0.93
1.13
1.73
Max
––
10
1
10
100
––
220
––
1.0
1.8
1.8
2.5
Volts
Volts
Volts
Amps
Amps
W
W/ºC
ºC
ºC/W
Units
Volts
µA
mA
uA
uA
––
Volts
Volts
I
C
I
CBO1 3/
I
EBO
3/
h
FE1
3/
h
FE2
3/
h
FE3
V
CE(Sat)
V
B E(Sat)
Collector – Emitter Saturation
Voltage*
Base – Emitter Saturation
Voltage *
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0101A
Doc
SSDI [ SOLID STATES DEVICES, INC ]
