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2N5015 参数 Datasheet PDF下载

2N5015图片预览
型号: 2N5015
PDF下载: 下载PDF文件 查看货源
内容描述: 0.5 AMP , 1000伏NPN晶体管 [0.5 AMP, 1000 Volts NPN Transistor]
分类和应用: 晶体小信号双极晶体管
文件页数/大小: 2 页 / 124 K
品牌: SSDI [ SOLID STATES DEVICES, INC ]
 浏览型号2N5015的Datasheet PDF文件第1页  
2N5015
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristic
3/
Collector – Emitter Breakdown Voltage
(I
C
= 200 µA
DC
, R
BE
= 1 KΩ)
Collector–Base Breakdown Voltage
(I
C
= 200 µA
DC
)
Emitter–Base Breakdown Voltage
(I
E
= 50 µA
DC
)
Collector Cutoff Current
(V
CB
= 760 V)
(V
CB
= 760 V, T
C
= 100°C)
Emitter Cutoff Current
(V
EB
= 4V)
DC Current Gain
4/
(I
C
= 20 mA
DC
, V
CE
= 10 V
DC
)
Collector – Emitter Saturation Voltage
(I
C
= 20 mA
DC
, I
B
= 5 mA
DC
)
Base – Emitter Saturation Voltage
4/
(I
C
= 20 mA
DC
, I
B
= 5 mA
DC
)
Current Gain Bandwidth Product
(I
C
= 20 mA
DC
, V
CE
= 10 V
DC
, f = 20 MHz)
Output Capacitance
(V
CB
= 10 V
DC
, I
E
= 0 A
DC
, f = 1.0 MHz)
4/
Symbol
BV
CER
BV
CBO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(Sat)
V
BE(Sat)
f
T
Cob
V
CC
= 125 V
DC
,
I
C
= 100 mA
DC
,
I
B1
= 20 mA
DC
I
B2
= 20 mA
DC
pw= 2 us
td
tr
ts
tf
Min
1000
1000
5
––
––
10
30
––
––
20
––
––
––
––
––
Typ
1300
-
7
0.08
6
0.003
70
80
0.07
0.7
25
12.5
50
100
1500
450
Max
––
––
––
12
100
20
180
1.8
1.0
––
30
200
1200
3000
800
Units
V
V
V
µAdc
µA
––
Vdc
Vdc
MHz
pF
(I
C
= 5 mA
DC
, V
CE
= 10 V
DC
)
Delay Time
Rise Time
Storage Time
Fall Time
nsec
Case Outline: TO-39
PIN 1: EMITTER
PIN 2: BASE
PIN 3: COLLECTOR
Case Outline: TO-5
PIN 1: EMITTER
PIN 2: BASE
PIN 3: COLLECTOR
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0043E
DOC