2N5013 thru 2N5015
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
FEATURES:
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BVCER and BVCEO to 1000 volts
Low Saturation Voltage
Low Leakage at High Temperature
High Gain, Low Saturation
200° C Operating, Gold Eutectic Die Attach
2N5010 thru 2N5012 Also Available, Contact Factory
TX, TXV, and S-Level Screening Available
0.5 AMP
800 – 1000 Volts
NPN Transistor
Maximum Ratings
Symbol
Value
Units
Collector – Emitter Voltage
(RBE = 1KΩ)
Collector – Base Voltage
Emitter – Base Voltage
Peak Collector Current
Peak Base Current
Total Device Dissipation
@ TC = 100º C
Derate above 100º C
Operating and Storage Temperature
Thermal Resistance, Junction to Case
CASE OUTLINE: TO-5
PIN 1: EMITTER
PIN 2: BASE
PIN 3: COLLECTOR
2N5013
2N5014
2N5015
2N5013
2N5014
2N5015
V
CER
V
CBO
V
EBO
I
C
I
B
P
D
Tj, Tstg
R
θJC
800
900
1000
800
900
1000
5
0.5
50
2.0
20
-65 to +200
50
V
V
V
A
mA
W
mW/ºC
ºC
ºC/W
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0043A
DOC
SSDI [ SOLID STATES DEVICES, INC ]
