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SSM9975GM 参数 Datasheet PDF下载

SSM9975GM图片预览
型号: SSM9975GM
PDF下载: 下载PDF文件 查看货源
内容描述: 双N沟道增强型功率MOSFET [DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS]
分类和应用:
文件页数/大小: 5 页 / 238 K
品牌: SSC [ SILICON STANDARD CORP. ]
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SSM9975M/GM
130
100
117
T
A
= 25
o
C
10V
7.0V
80
T
A
=150 C
o
10V
7.0V
104
I
D
, Drain Current (A)
I
D
, Drain Current (A)
91
78
5.0V
4.5V
60
5.0V
4.5V
65
52
40
39
V
G
=3.0V
20
26
V
G
=3.0V
13
0
0
2
4
6
8
10
12
0
0
2
4
6
8
10
12
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
27
2.5
I
D
=5A
T
A
=25 C
25
o
2.0
I
D
=7A
V
G
=10V
Normalized R
DS(ON)
R
DS(ON)
(m
)
1.5
23
1.0
21
0.5
19
3
5
7
9
11
0.0
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance vs. Gate Voltage
Fig 4. Normalized On-Resistance
vs. Junction Temperature
2.5
7
6
2
5
4
V
GS(th)
(V)
I
S
(A)
3
T
j
=150
o
C
T
j
=25 C
o
1.5
2
1
1
0
0
0.2
0.4
0.6
0.8
1
1.2
0.5
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
,Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
12/10/2004 Rev.2.01
www.SiliconStandard.com
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