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SS34 参数 Datasheet PDF下载

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型号: SS34
PDF下载: 下载PDF文件 查看货源
内容描述: 肖特基势垒整流器器 [SCHOTTKY BARRIER RECTIFIERS]
分类和应用: 二极管光电二极管
文件页数/大小: 2 页 / 214 K
品牌: SSC [ SILICON STANDARD CORP. ]
 浏览型号SS34的Datasheet PDF文件第2页  
SS32-SS315
SCHOTTKY BARRIER RECTIFIERS
PRODUCT SUMMARY
3.0 AMPS Surface Mount
SMC/DO-214AB
.126(3.20)
.114(2.90)
.245(6.22)
.220(5.59)
FEATURES
For surface mounted application
Easy pick and place
Metal to silicon rectifier, majority carrier conduction
Low power loss, high efficiency
High current capability, low VF
High surge current capability
Plastic material used carriers Underwriters
Laboratory Classification 94V-0
Epitaxial construction
High temperature soldering:
o
260 C / 10 seconds at terminals
.280(7.11)
.260(6.60)
.012(.31)
.006(.15)
.103(2.62)
.079(2.00)
.063(1.6)
.039(1.0)
.320(8.13)
.305(7.75)
.008(.20)
.004(.10)
MECANICAL DATA
Case: JEDEC DO-214AB Molded plastic
Terminals: Pure tin plated, lead free.
Polarity: Indicated by cathode band
Packaging: 16mm tape per EIA STD RS-481
Weight: 0.21gram
o
Dimensions in inches and (millimeters)
Pb-free; RoHS-compliant
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol SS
32
Maximum Recurrent Peak Reverse Voltage
V
RRM
20
Maximum RMS Voltage
14
V
RMS
Maximum DC Blocking Voltage
20
V
DC
Type Number
SS
33
30
21
30
SS
34
40
28
40
SS
35
50
35
50
3.0
SS
36
60
42
60
SS
39
90
63
90
SS
310
100
70
100
SS
Units
315
150
V
105
V
150
V
A
Maximum Average Forward Rectified
Current at T
L
(See Fig. 1)
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
(Note 1)
IF= 3.0A @ 25
o
C
@ 100
o
C
o
Maximum DC Reverse Current @ T
A
=25
C
at
o
Rated DC Blocking Voltage
@ T
A
=125
C
Typical Thermal Resistance ( Note 2 )
I
(AV)
I
FSM
V
F
I
R
100
70
A
V
mA
mA
o
0.5
0.4
0.5
10
0.75
0.65
5
17
55
0.85
0.95
0.70
0.80
0.1
0.5
R
θJL
R
θJA
Operating Temperature Range
T
J
-55 to +125
Storage Temperature Range
T
STG
Notes:
1. Pulse Test with PW=300 usec, 1% Duty Cycle
C/W
o
o
-55 to +150
-55 to +150
C
C
04/05/2007 Rev.1.00
www.SiliconStandard.com
1