SS6580/L
n
n
TEST CIRCUIT
Refer to TYPICAL APPLICATION CIRCUIT.
ELECTRICAL CHARACTERISTICS
specified.)
PARAMETER
VCC Supply Current
Nominal Supply
Power-On Reset
V
CC
Threshold
Oscillator
Frequency
Duty Cycle
Internal Reference Voltage
Reference Voltage
Error Amplifier
DC Gain
Gain-Bandwidth Product
Slew Rate
Gate Driver
Upper Gate Source
Upper Gate Sink
Protection
OCSET Current Source
SS Current
Shutdown
Shutdown Low Input
Shutdown High Input
Shutdown Mode Current
V
OCSET
=4.5VDC
Comp=10pF
SS6580
SS6580L
V
OCSET
=4.5V
UGATE Open
TEST CONDITIONS
(VCC=12V, T
A
=25°C, unless otherwise
SYMBOL
MIN.
TYP.
MAX.
UNIT
I
VCC
2
mA
9.5
V
200
88
KHz
%
1.96
1.27
2.00
1.30
2.04
1.33
V
76
GBW
SR
11
6
dB
MHz
V/µS
R
UGATE
R
UGATE
7
5
Ω
Ω
I
OCSET
I
SS
200
10
µA
µA
V
IN
L
V
IN
H
2
0.35
V
V
µA
1
Rev.2.01 6/26/2003
www.SiliconStandard.com
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