MBR20100CT, MBRF20100CT
& MBRB20100CT Series
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
( T
C
= 25 C unless otherwise noted )
( T
C
= 25
o
C unless otherwise noted )
o
Parameter
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward
rectified current at T
C
=133
o
C
Total device
Per leg
Symbol
V
RRM
V
RWM
V
DC
I
F(AV)
I
FSM
I
RRM
dv/dt
MBR2090CT
90
90
90
20
10
150
0.5
10,000
MBR20100CT
100
100
100
Unit
Volts
Volts
Volts
Amps
Amps
Amp
V/
us
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method) per leg
Peak repetitive reverse current per leg at t
p
= 2.0
u
s, 1KHz
Voltage rate of change (rated V
R
)
Maximum instantaneous forward voltage per leg (Note 4)
at I
F
=10A, T
C
=25
o
C
at I
F
=10A, T
C
=125 C
at I
F
=20A, T
C
=25 C
at I
F
=20A, T
C
=125 C
Maximum reverse current per
leg at working peak reverse
voltage (Note 4)
T
J
=25
o
C
T
J
=100
o
C
o
o
o
0.80
V
F
0.65
0.95
0.75
100
I
R
6.0
R
θ
JA
R
θ
JC
V
ISOL
T
J
T
STG
MBR 60 / MBRF - / MBRB 60
MBR 2 / MBRF 3.5 / MBRB 2
4500 (Note 1)
3500 (Note 2)
1500 (Note 3)
-55 to +150
-55 to +150
o
Volts
uA
mA
C/W
Typical thermal resistance per leg
RMS Isolation voltage (MBRF type only) from terminals
to heatsink with t = 1.0 second, RH < 30%
Operating junction temperature range
Storage temperature range
Volts
o
C
C
o
02/08/2007 Rev.1.00
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SSC [ SILICON STANDARD CORP. ]
